Method of manufacturing vertical planar power mosfet and method of manufacturing trench-gate power mosfet

ABSTRACT

In the manufacturing steps of a super-junction power MOSFET having a drift region having a super junction structure, after the super junction structure is formed, introduction of a body region and the like and heat treatment related thereto are typically performed. However, in the process thereof, a dopant in each of P-type column regions and the like included in the super junction structure is diffused to result in a scattered dopant profile. This causes problems such as degradation of a breakdown voltage when a reverse bias voltage is applied between a drain and a source and an increase in ON resistance. According to the present invention, in a method of manufacturing a silicon-based vertical planar power MOSFET, a body region forming a channel region is formed by selective epitaxial growth.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation of U.S. application Ser. No. 14/149,909, filedJan. 8, 2014, which is a divisional application of U.S. Ser. No.13/742,489, filed Jan. 16, 2013 (now U.S. Pat. No. 8,647,948) whichclaims priority to Japanese Patent Application No. 2012-013030 filed onJan. 25, 2012. The contents of these applications are incorporatedherein by reference in their entirety.

BACKGROUND

The present invention relates to a technology which is effective whenapplied to a device structure and a device manufacturing technique in asemiconductor device (or semiconductor integrated circuit device) suchas a vertical planar power MOSFET or a trench-gate MOSFET and a methodof manufacturing the semiconductor device.

Japanese Unexamined Patent Publication No. 2007-173783 (PatentDocument 1) or U.S. Pat. No. 7,928,470 (Patent Document 2) correspondingthereto discloses a technique in which, in a silicon-based verticalplanar power MOSFET, a P⁻-type body region (channel region) is formedover the entire surface of a super junction drift area by epitaxialgrowth.

Also, Japanese Unexamined Patent Publication No. 2008-283151 (PatentDocument 3) or US Patent Publication No. 2011-136308 (Patent Document 4)corresponding thereto discloses a technique in which, in a silicon-basedtrench power MOSFET, a P-type body region (channel region) is formedover the entire surface of a super-junction drift area by epitaxialgrowth.

RELATED ART DOCUMENTS Patent Documents [Patent Document 1]

-   Japanese Unexamined Patent Publication No. 2007-173783

[Patent Document 2]

-   U.S. Pat. No. 7,928,470

[Patent Document 3]

-   Japanese Unexamined Patent Publication No. 2008-283151

[Patent Document 4]

-   US Patent Publication No. 2011-136308

SUMMARY

In the manufacturing steps of a super-junction power MOSFET having adrift area having a super junction structure, after the super junctionstructure is formed, introduction of a body region and the like and heattreatment related thereto are typically performed. However, in theprocess thereof, a dopant in each of P-type column regions and the likeincluded in the super junction structure is diffused to result in ascattered dopant profile. This causes problems such as degradation of abreakdown voltage when a reverse bias voltage is applied between a drainand a source and an increase in ON resistance.

The present invention has been achieved to solve such problems.

An object of the present invention is to provide a highly reliablemanufacturing process for a semiconductor device.

The above and other objects and novel features of the present inventionwill become apparent from a statement in the present specification andthe accompanying drawings.

The following is a brief description of a representative aspect of theinvention disclosed in the present application.

That is, according to an aspect of the invention disclosed in thepresent application, in a method of manufacturing a silicon-basedvertical planar power MOSFET, a body region forming a channel region isformed by selective epitaxial growth.

The following is a brief description of an effect obtained according tothe representative aspect of the invention disclosed in the presentapplication.

That is, in the method of manufacturing the silicon-based verticalplanar power MOSFET, the body region forming the channel region isformed by selective epitaxial growth. This can steepen a dopant profilein a P-type column region or the like included in a super junctionstructure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view of the entire upper surface of a semiconductor chip forillustrating the chip layout of a vertical planar power MOSFET as anexample of a target device in a manufacturing method of a semiconductordevice of an embodiment of the present invention;

FIG. 2 is an enlarged plan view of the partially cut-away region R1 ofthe cell portion of FIG. 1;

FIG. 3 is a device cross-sectional view of a unit active cell regioncorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2;

FIG. 4 is a device cross-sectional view (of the step of growing anN⁻-type silicon epitaxial layer) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 5 is a device cross-sectional view (of the step of forming trenchesto be filled with P-type columns) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 6 is a device cross-sectional view (of the step of Si epitaxialgrowth for embedding P-type columns) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 7 is a device cross-sectional view (of the step of planarizationafter embedding the P-type columns) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 8 is a device cross-sectional view (of the step of forming trenchesto be filled with P-type body regions) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 9 is a device cross-sectional view (of the step of selectiveepitaxial growth of the P-type body regions) during the manufacturingstep corresponding to the A-A′ cross section of the partially cut-awayregion R2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 10 is a device cross-sectional view (of the step of planarizationafter selective epitaxial growth of P-type body regions) during themanufacturing step corresponding to the A-A′ cross section of thepartially cut-away region R2 of the cell portion of FIG. 2, which is forillustrating the manufacturing method (pre-channel process) of thesemiconductor device of the embodiment of the present invention;

FIG. 11 is a device cross-sectional view (of the step of forming gateelectrodes) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the manufacturing method (pre-channelprocess) of the semiconductor device of the embodiment of the presentinvention;

FIG. 12 is a device cross-sectional view (of the step of introducingN⁺-type source regions) during the manufacturing step corresponding tothe A-A′ cross section of the partially cut-away region R2 of the cellportion of FIG. 2, which is for illustrating the manufacturing method(pre-channel process) of the semiconductor device of the embodiment ofthe present invention;

FIG. 13 is a device cross-sectional view (of the step of forming aninterlayer insulating film) during the manufacturing step correspondingto the A-A′ cross section of the partially cut-away region R2 of thecell portion of FIG. 2, which is for illustrating the manufacturingmethod (pre-channel process) of the semiconductor device of theembodiment of the present invention;

FIG. 14 is a device cross-sectional view (of the step of forming contacttrenches) during the manufacturing step corresponding to the A-A′ crosssection of the partially cut-away region R2 of the cell portion of FIG.2, which is for illustrating the manufacturing method (pre-channelprocess) of the semiconductor device of the embodiment of the presentinvention;

FIG. 15 is a device cross-sectional view (of the step of introducingP⁺-type body contact regions) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 16 is a device cross-sectional view (of the step of forming sourcemetal electrodes, etc.) during the manufacturing step corresponding tothe A-A′ cross section of the partially cut-away region R2 of the cellportion of FIG. 2, which is for illustrating the manufacturing method(pre-channel process) of the semiconductor device of the embodiment ofthe present invention;

FIG. 17 is a device cross-sectional view (of the step of forming a gateinsulating film, etc.) during the manufacturing step corresponding tothe A-A′ cross section of the partially cut-away region R2 of the cellportion of FIG. 2, which is for illustrating a modification (pre-gateprocess) of a wafer process in the manufacturing method of thesemiconductor device of the embodiment of the present invention;

FIG. 18 is a device cross-sectional view (of the step of gate electrodeprocessing) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the modification (pre-gate process) ofthe wafer process in the manufacturing method of the semiconductordevice of the embodiment of the present invention;

FIG. 19 is a device cross-sectional view (of the step of forming asurface oxide film, etc.) during the manufacturing step corresponding tothe A-A′ cross section of the partially cut-away region R2 of the cellportion of FIG. 2, which is for illustrating the modification (pre-gateprocess) of the wafer process in the manufacturing method of thesemiconductor device of the embodiment of the present invention;

FIG. 20 is a device cross-sectional view (of the step of formingtrenches to be filled with P-type body regions) during the manufacturingstep corresponding to the A-A′ cross section of the partially cut-awayregion R2 of the cell portion of FIG. 2, which is for illustrating themodification (pre-gate process) of the wafer process in themanufacturing method of the semiconductor device of the embodiment ofthe present invention;

FIG. 21 is a device cross-sectional view (of the step of selectiveepitaxial growth of P-type body regions) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themodification (pre-gate process) of the wafer process in themanufacturing method of the semiconductor device of the embodiment ofthe present invention;

FIG. 22 is a device cross-sectional view (of the step of introducingN⁺-type source regions) during the manufacturing step corresponding tothe A-A′ cross section of the partially cut-away region R2 of the cellportion of FIG. 2, which is for illustrating the modification (pre-gateprocess) of the wafer process in the manufacturing method of thesemiconductor device of the embodiment of the present invention;

FIG. 23 is a device cross-sectional view (of the step of removing aresist film for introducing N⁺-type source regions) during themanufacturing step corresponding to the A-A′ cross section of thepartially cut-away region R2 of the cell portion of FIG. 2, which is forillustrating the modification (pre-gate process) of the wafer process inthe manufacturing method of the semiconductor device of the embodimentof the present invention;

FIG. 24 is a device cross-sectional view (of the step of growing afirst-level N⁻-type silicon epitaxial layer) during the manufacturingstep corresponding to the A-A′ cross section of the partially cut-awayregion R2 of the cell portion of FIG. 2, which is for illustrating amodification (multi-epitaxial method) of a wafer process in themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 25 is a device cross-sectional view (of the step of multi-stageimplantation of boron ions into the first-level N⁻-type siliconepitaxial layer) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the modification (multi-epitaxialmethod) of the wafer process in the manufacturing method (pre-channelprocess) of the semiconductor device of the embodiment of the presentinvention;

FIG. 26 is a device cross-sectional view (of the step of multi-stageimplantation of boron ions into a second-level N⁻-type silicon epitaxiallayer, etc.) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the modification (multi-epitaxialmethod) of the wafer process in the manufacturing method (pre-channelprocess) of the semiconductor device of the embodiment of the presentinvention;

FIG. 27 is a device cross-sectional view (of the step of activationanneal after multi-stage implantation of boron ions into a third-levelN⁻-type silicon epitaxial layer, etc.) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themodification (multi-epitaxial method) of the wafer process in themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 28 is a device cross-sectional view (of the step of formingtrenches to be filled with P-type body regions) during the manufacturingstep corresponding to the A-A′ cross section of the partially cut-awayregion R2 of the cell portion of FIG. 2, which is for illustrating themodification (multi-epitaxial method) of the wafer process in themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 29 is a device cross-sectional view (of the step of selectiveepitaxial growth of the P-type body regions) during the manufacturingstep corresponding to the A-A′ cross section of the partially cut-awayregion R2 of the cell portion of FIG. 2, which is for illustrating themodification (multi-epitaxial method) of the wafer process in themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 30 is a device cross-sectional view (of the step of planarizationafter the selective epitaxial growth of P-type body regions) during themanufacturing step corresponding to the A-A′ cross section of thepartially cut-away region R2 of the cell portion of FIG. 2, which is forillustrating the modification (multi-epitaxial method) of the waferprocess in the manufacturing method (pre-channel process) of thesemiconductor device of the embodiment of the present invention;

FIG. 31 is a device cross-sectional view (of the step of forming gateelectrodes) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the modification (multi-epitaxialmethod) of the wafer process in the manufacturing method (pre-channelprocess) of the semiconductor device of the embodiment of the presentinvention;

FIG. 32 is a device cross-sectional view (of the step of introducingN⁺-type source regions) during the manufacturing step corresponding tothe A-A′ cross section of the partially cut-away region R2 of the cellportion of FIG. 2, which is for illustrating the modification(multi-epitaxial method) of the wafer process in the manufacturingmethod (pre-channel process) of the semiconductor device of theembodiment of the present invention;

FIG. 33 is a device cross-sectional view (of the step of forming aninterlayer insulating film) during the manufacturing step correspondingto the A-A′ cross section of the partially cut-away region R2 of thecell portion of FIG. 2, which is for illustrating the modification(multi-epitaxial method) of the wafer process in the manufacturingmethod (pre-channel process) of the semiconductor device of theembodiment of the present invention;

FIG. 34 is a device cross-sectional view (of the step of forming contacttrenches) during the manufacturing step corresponding to the A-A′ crosssection of the partially cut-away region R2 of the cell portion of FIG.2, which is for illustrating the modification (multi-epitaxial method)of the wafer process in the manufacturing method (pre-channel process)of the semiconductor device of the embodiment of the present invention;

FIG. 35 is a device cross-sectional view (of the step of introducingP⁺-type body contact regions) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themodification (multi-epitaxial method) of the wafer process in themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 36 is a device cross-sectional view (of the step of forming asource metal electrode, etc.) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themodification (multi-epitaxial method) of the wafer process in themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention;

FIG. 37 is a device cross-sectional view of the unit active cell regioncorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2 corresponding to FIG. 3, which is forillustrating Modification 1 (P-type body carbon doping) related to thestructure of channel regions in a vertical planar power MOSFET or thelike as the example of the target device in the manufacturing method ofthe semiconductor device of the embodiment of the present invention;

FIG. 38 is a device cross-sectional view of the unit active cell regioncorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2 corresponding to FIG. 3, which is forillustrating Modification 2 (source carbon doping) related to thestructure of source regions in the vertical planar power MOSFET or thelike as the example of the target device in the manufacturing method ofthe semiconductor device of the embodiment of the present invention;

FIG. 39 is a device cross-sectional view of the unit active cell regioncorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2 corresponding to FIG. 3, which is forillustrating Modification 1 (P-type body & source carbon doping) relatedto the structure of the channel and source regions in the verticalplanar power MOSFET or the like as the example of the target device inthe method of manufacturing the semiconductor device of the embodimentof the present invention;

FIG. 40 is a device cross-sectional view of the unit active cell regioncorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2 corresponding to FIG. 3, which is forillustrating a modification (carbon cluster implantation) of a doseprocess corresponding to Modification 2 (source carbon doping) relatedto the structure of source regions in the vertical planar power MOSFETor the like as the example of the target device in the method ofmanufacturing the semiconductor device of the embodiment of the presentinvention;

FIG. 41 is an enlarged plan view of the partially cut-away region R1 ofthe cell portion of FIG. 1 corresponding to FIG. 2, which is forillustrating a trench-gate power MOSFET as an example of the targetdevice in a method of manufacturing a semiconductor device of anotherembodiment of the present invention;

FIG. 42 is a device cross-sectional view (corresponding to FIG. 3) ofthe unit active cell region corresponding to the B-B′ cross section ofthe partially cut-away region R2 of the cell portion of FIG. 41;

FIG. 43 is a device cross-sectional view (of the step of forming a superjunction structure in a drift region) during the manufacturing stepcorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 41, which is for illustrating a waferprocess in the method of manufacturing the semiconductor device of theother embodiment of the present invention;

FIG. 44 is a device cross-sectional view (of the step of epitaxialgrowth of P-type body regions) during the manufacturing stepcorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 41, which is for illustrating the waferprocess in the method of manufacturing the semiconductor device of theother embodiment of the present invention;

FIG. 45 is a device cross-sectional view (of the step of formingtrenches to be filled with gate electrodes) during the manufacturingstep corresponding to the B-B′ cross section of the partially cut-awayregion R2 of the cell portion of FIG. 41, which is for illustrating thewafer process in the method of manufacturing the semiconductor device ofthe other embodiment of the present invention;

FIG. 46 is a device cross-sectional view (of the step of forming a gateinsulating film) during the manufacturing step corresponding to the B-B′cross section of the partially cut-away region R2 of the cell portion ofFIG. 41, which is for illustrating the wafer process in the method ofmanufacturing the semiconductor device of the other embodiment of thepresent invention;

FIG. 47 is a device cross-sectional view (of the step of depositing agate polysilicon film) during the manufacturing step corresponding tothe B-B′ cross section of the partially cut-away region R2 of the cellportion of FIG. 41, which is for illustrating the wafer process in themethod of manufacturing the semiconductor device of the other embodimentof the present invention;

FIG. 48 is a device cross-sectional view (of the step of processing thegate polysilicon film) during the manufacturing step corresponding tothe B-B′ cross section of the partially cut-away region R2 of the cellportion of FIG. 41, which is for illustrating the wafer process in themethod of manufacturing the semiconductor device of the other embodimentof the present invention;

FIG. 49 is a device cross-sectional view (of the step of introducingN⁺-type source regions) during the manufacturing step corresponding tothe B-B′ cross section of the partially cut-away region R2 of the cellportion of FIG. 41, which is for illustrating the wafer process in themethod of manufacturing the semiconductor device of the other embodimentof the present invention;

FIG. 50 is a device cross-sectional view (of the step of depositing asurface oxide film) during the manufacturing step corresponding to theB-B′ cross section of the partially cut-away region R2 of the cellportion of FIG. 41, which is for illustrating the wafer process in themethod of manufacturing the semiconductor device of the other embodimentof the present invention;

FIG. 51 is a device cross-sectional view (of the step of etching asurface of a semiconductor substrate) during the manufacturing stepcorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 41, which is for illustrating the waferprocess in the method of manufacturing the semiconductor device of theother embodiment of the present invention;

FIG. 52 is a device cross-sectional view (of the step of forming SiGebody contact regions) during the manufacturing step corresponding to theB-B′ cross section of the partially cut-away region R2 of the cellportion of FIG. 41, which is for illustrating the wafer process in themethod of manufacturing the semiconductor device of the other embodimentof the present invention;

FIG. 53 is a device cross-sectional view (of the step of forming asource metal electrode) during the manufacturing step corresponding tothe B-B′ cross section of the partially cut-away region R2 of the cellportion of FIG. 41, which is for illustrating the wafer process in themethod of manufacturing the semiconductor device of the other embodimentof the present invention;

FIG. 54 is a device cross-sectional view (of the step of forming themetal drain electrode) during the manufacturing step corresponding tothe B-B′ cross section of the partially cut-away region R2 of the cellportion of FIG. 41, which is for illustrating the wafer process in themethod of manufacturing the semiconductor device of the other embodimentof the present invention;

FIG. 55 is a device cross-sectional view (of the step of depositing asurface oxide film and introducing SiGe regions) during themanufacturing step corresponding to the B-B′ cross section of thepartially cut-away region R2 of the cell portion of FIG. 41corresponding to FIG. 50, which is for illustrating a modification (ionimplantation method) related to a method of forming the SiGe regions inthe method of manufacturing the semiconductor device of the otherembodiment of the present invention;

FIG. 56 is an overall top view or the like of a wafer or the like forsupplementary explanation related to an example (notch <110>orientation) of the crystal plane orientation of the wafer or the likerelated to each of the foregoing embodiments (including the variousmodifications); and

FIG. 57 is an overall top view or the like of the wafer or the like forsupplementary explanation related to another example (notch <100>orientation) of the crystal plane orientation of the wafer or the likerelated to each of the foregoing embodiments (including the variousmodifications).

DETAILED DESCRIPTION Outline of Embodiments

First, a description will be given to the outline of representativeembodiments of the invention disclosed in the present application.

1. In a method of manufacturing a vertical planar power MOSFET, thevertical planar power MOSFET includes: (a) a silicon-based semiconductorsubstrate having a first main surface and a second main surface; (b) adrift region having a super junction structure in which a column regionof a first conductivity type and a column region of a secondconductivity type which are provided in the semiconductor substrate arealternately and repeatedly formed; (c) a drain region of the firstconductivity type provided in a semiconductor back surface area of thesemiconductor substrate closer to the second main surface; (d) a metaldrain electrode provided over the second main surface of thesemiconductor substrate; (e) a body region of the second conductivitytype provided in a semiconductor top surface area of the semiconductorsubstrate closer to the first main surface; (f) a source region of thefirst conductivity type which is the semiconductor top surface area ofthe semiconductor substrate closer to the first main surface andprovided in the body region; (g) a gate electrode provided over thefirst main surface of the semiconductor substrate via a gate insulatingfilm; and (h) a metal source electrode provided over the first mainsurface of the semiconductor substrate so as to be electrically coupledto the source region. The method of manufacturing the vertical planarpower MOSFET includes the steps of: (x1) forming the super junctionstructure on the top surface side of the silicon-based wafer of thefirst conductivity type; (x2) forming a trench to be filled with thebody region for embedding the body region in a surface of the superjunction structure; and (x3) filling the trench to be filled with thebody region by selective epitaxial growth.

2. In the method of manufacturing the vertical planar power MOSFETaccording to article 1, the body region has an area doped with carbon.

3. In the method of manufacturing the vertical planar power MOSFETaccording to article 1 or 2, the source region has an area doped withcarbon.

4. In the method of manufacturing the vertical planar power MOSFETaccording to any one of articles 1 to 3, the column region of the secondconductivity type is doped with germanium or carbon.

5. In the method of manufacturing the vertical planar power MOSFETaccording to any one of articles 1 to 4, a growth temperature for theselective epitaxial growth ranges from 600 to 900° C.

6. In the method of manufacturing the vertical planar power MOSFETaccording to any one of articles 3 to 5, the area of the source regiondoped with carbon is formed by selective epitaxial growth.

7. In the method of manufacturing the vertical planar power MOSFETaccording to any one of articles 3 to 5, the area of the source regiondoped with carbon is formed by ion implantation of cluster carbon.

8. In a method of manufacturing a trench-gate power MOSFET, the trenchgate power MOSFET includes: (a) a semiconductor substrate having a firstmain surface and a second main surface; (b) a drift region having asuper junction structure in which a plurality of column regions each ofa first conductivity type and a plurality of column regions each of asecond conductivity type which are provided in the semiconductorsubstrate are alternately formed; (c) a drain region of the firstconductivity type provided in a semiconductor back surface area of thesemiconductor substrate closer to the second main surface; (d) a metaldrain electrode provided over the second main surface of thesemiconductor substrate; (e) a body region of the second conductivitytype provided in a semiconductor top surface area of the semiconductorsubstrate closer to the first main surface; (f) a trench extending fromwithin each of the plurality of column regions each of the firstconductivity type through the body region and reaching the first mainsurface of the semiconductor substrate; (g) a source region of the firstconductivity type which is the semiconductor top surface area of thesemiconductor substrate closer to the first main surface and provided inthe body region; (h) a trench gate electrode provided in the trench viaa gate insulating film; (i) a SiGe epitaxial region of the secondconductivity type provided closer to the first main surface of thesemiconductor substrate so as to oppose the trench gate electrode withthe body region being interposed therebetween; and (j) a metal sourceelectrode provided over the first main surface of the semiconductorsubstrate so as to be electrically coupled to the source region. Themethod of manufacturing the trench-gate power MOSFET includes the stepsof: (x1) forming the super junction structure on the top surface side ofthe silicon-based wafer of the first conductivity type; (x2) forming thebody region of the second conductivity type over the super junctionstructure on the top surface side of the silicon-based wafer; (x3)forming a trench to be filled with the SiGe epitaxial region in the bodyregion so as to leave the body region between the trench to be filledwith the SiGe epitaxial region and the trench gate electrode; and (x4)filling the trench to be filled with the SiGe epitaxial region byselective epitaxial growth.

9. In the method of manufacturing the trench-gate power MOSFET accordingto article 8, each of the column regions of the second conductivity typeis doped with germanium or carbon.

10. In a method of manufacturing a trench-gate power MOSFET, thetrench-gate power MOSFET includes: (a) a semiconductor substrate havinga first main surface and a second main surface; (b) a drift regionhaving a super junction structure in which a plurality of column regionseach of a first conductivity type and a plurality of column regions eachof a second conductivity type which are provided in the semiconductorsubstrate are alternately formed; (c) a drain region of the firstconductivity type provided in a semiconductor back surface area of thesemiconductor substrate closer to the second main surface; (d) a metaldrain electrode provided over the second main surface of thesemiconductor substrate; (e) a body region of the second conductivitytype provided in a semiconductor top surface area of the semiconductorsubstrate closer to the first main surface; (f) a trench extending fromwithin each of the plurality of column regions each of the firstconductivity type through the body region and reaching the first mainsurface of the semiconductor substrate; (g) a source region of the firstconductivity type which is the semiconductor top surface area of thesemiconductor substrate closer to the first main surface and provided inthe body region; (h) a trench gate electrode provided in the trench viaa gate insulating film; (i) a SiGe semiconductor region of the secondconductivity type provided closer to the first main surface of thesemiconductor substrate so as to oppose the trench gate electrode withthe body region being interposed therebetween; and (j) a metal sourceelectrode provided over the first main surface of the semiconductorsubstrate so as to be electrically coupled to the source region. Themethod of manufacturing the trench-gate power MOSFET includes the stepsof: (x1) forming the super junction structure on the top surface side ofthe silicon-based wafer of the first conductivity type; (x2) forming thebody region of the second conductivity type over the super junctionstructure on the top surface side of the silicon-based wafer; (x3)forming the source region in a surface of the body region; and (x4)forming the SiGe semiconductor region in a part of the body region byion implantation so as to leave the body region between the SiGesemiconductor region and the trench gate electrode.

11. In the method of manufacturing the trench-gate power MOSFETaccording to article 10, each of the column regions of the secondconductivity type is doped with germanium or carbon.

12. A vertical planar power MOSFET includes: (a) a silicon-basedsemiconductor substrate having a first main surface and a second mainsurface; (b) a drift region having a super junction structure in which acolumn region of a first conductivity type and a column region of asecond conductivity type which are provided in the semiconductorsubstrate are alternately and repeatedly formed; (c) a drain region ofthe first conductivity type provided in a semiconductor back surfacearea of the semiconductor substrate closer to the second main surface;(d) a metal drain electrode provided over the second main surface of thesemiconductor substrate; (e) a body region of the second conductivitytype provided in a semiconductor top surface area of the semiconductorsubstrate closer to the first main surface; (f) a source region of thefirst conductivity type which is the semiconductor top surface area ofthe semiconductor substrate closer to the first main surface andprovided in the body region; (g) a gate electrode provided over thefirst main surface of the semiconductor substrate via a gate insulatingfilm; and (h) a metal source electrode provided over the first mainsurface of the semiconductor substrate so as to be electrically coupledto the source region. Here, the body region is formed by selectiveepitaxial growth.

13. In the vertical planar power MOSFET according to article 12, thebody region has an area doped with carbon.

14. In the vertical planar power MOSFET according to article 12 or 13,the source region has an area doped with carbon.

15. In the vertical planar power MOSFET according to any one of articles12 to 14, the column region of the second conductivity type is dopedwith germanium or carbon.

16. In the vertical planar power MOSFET according to article 14 or 15,the area of the source region doped with carbon is formed by selectiveepitaxial growth.

17. In the vertical planar power MOSFET according to article 14 or 15,the area of the source region doped with carbon is formed by ionimplantation of cluster carbon.

18. A trench-gate power MOSFET includes: (a) a semiconductor substratehaving a first main surface and a second main surface; (b) a driftregion having a super junction structure in which a plurality of columnregions each of a first conductivity type and a plurality of columnregions each of a second conductivity type which are provided in thesemiconductor substrate are alternately formed; (c) a drain region ofthe first conductivity type provided in a semiconductor back surfacearea of the semiconductor substrate closer to the second main surface;(d) a metal drain electrode provided over the second main surface of thesemiconductor substrate; (e) a body region of the second conductivitytype provided in a semiconductor top surface area of the semiconductorsubstrate closer to the first main surface; (f) a trench extending fromwithin each of the plurality of column regions each of the firstconductivity type through the body region and reaching the first mainsurface of the semiconductor substrate; (g) a source region of the firstconductivity type which is the semiconductor top surface area of thesemiconductor substrate closer to the first main surface and provided inthe body region; (h) a trench gate electrode provided in the trench viaa gate insulating film; (i) a SiGe epitaxial region of the secondconductivity type provided closer to the first main surface of thesemiconductor substrate so as to oppose the trench gate electrode withthe body region being interposed therebetween; and (j) a metal sourceelectrode provided over the first main surface of the semiconductorsubstrate so as to be electrically coupled to the source region.

19. In the trench-gate power MOSFET according to article 18, the SiGeepitaxial region is formed by selective epitaxial growth.

20. In the trench-gate power MOSFET according to article 18, the SiGeepitaxial region is formed by implantation of Ge ions into the bodyregion.

<Explanation of Description Form, Basic Terminology, and Use Thereof inPresent Application>

1. In the present application, if necessary for the sake of convenience,the description of an embodiment may be such that the embodiment isdivided into a plurality of sections in the description thereof.However, they are by no means independent of or distinct from each otherunless particularly explicitly described otherwise, and one of theindividual parts of a single example is details, variations, and soforth of part or the whole of the others. In principle, a repeateddescription of like parts will be omitted. Each constituent element inthe embodiment is not indispensable unless particularly explicitlydescribed otherwise, unless the constituent element is theoreticallylimited to a given number, or unless it is obvious from the context thatthe constituent element is indispensable.

Also in the present application, when a “semiconductor device” ismentioned, it primarily refers to various stand-alone transistors(active elements) or to a device in which a resistor, a capacitor, andthe like are integrated around such a stand-alone transistor over asemiconductor chip or the like (e.g., a single-crystal siliconsubstrate). Representative examples of the various transistors which canbe shown include MISFETs (Metal Insulator Semiconductor Field EffectTransistors) represented by a MOSFET (Metal Oxide Semiconductor FieldEffect Transistor). Representative examples of the various stand-alonetransistors that can be shown include a power MOSFET and an IGBT(Insulated Gate Bipolar Transistor). These representative examples aregenerally categorized into power semiconductor devices and include notonly the power MOSFET and the IGBT, but also a bipolar power transistor,a thyristor, a power diode, and the like.

A representative form of the power MOSFET is a double diffused verticalpower MOSFET having a source electrode on the top surface thereof andhaving a drain electrode on the back surface thereof or a vertical powerMOSFET. The double diffused vertical power MOSFET or the vertical powerMOSFET can be primarily classified into two types. The first type is aplanar gate type described mainly in the embodiments. The second type isa trench gate type such as a U-MOSFET.

Another example of the power MOSFET is an LD-MOSFET (Lateral-DiffusedMOSFET).

2. Likewise, even when such wording as “X comprised of A” is used inassociation with a material, a composition, or the like in thedescription of the embodiments or the like, it does not exclude amaterial, a composition, or the like which contains an element otherthan A as one of the main constituent elements thereof unlessparticularly explicitly described otherwise or unless it is obvious fromthe context that it excludes such a material, a composition, or thelike. For example, when a component is mentioned, the wording means “Xcontaining A as a main component” or the like. It will be appreciatedthat, even when, e.g., a “silicon member” or the like is mentioned, itis not limited to pure silicon, and a member containing a SiGe alloy,another multi-element alloy containing silicon as a main component,another additive, or the like is also included. Likewise, it will alsobe appreciated that, even when a “silicon oxide film”,“silicon-oxide-based insulating film”, or the like is mentioned, itincludes not only a relatively pure undoped silicon dioxide, but also athermal oxide film of FSG (Fluorosilicate Glass), TEOS-based siliconoxide, SiOC (Silicon Oxicarbide), carbon-doped silicon oxide, OSG(Organosilicate glass), PSG (Phosphorus Silicate Glass), BPSG(Borophosphosilicate Glass), or the like, a CVD oxide film, a coatedsilicon oxide such as SOG (Spin ON Glass) or NCS (Nano-ClusteringSilica), a silica-based Low-k insulating film (porous insulating film)obtained by introducing voids into the same member as mentioned above, acomposite film with another silicon-based insulating film which containsany of these mentioned above as a main constituent element thereof, andthe like.

As a silicon-based insulating film commonly used in a semiconductorfield along with a silicon-oxide-based insulating film, there is asilicon-nitride-based insulating film. Materials belonging to thissystem include SiN, SiCN, SiNH, SiCNH, and the like. Here, when “siliconnitride” is mentioned, it includes both of SiN and SiNH unlessparticularly explicitly described otherwise. Likewise, when “SiCN” ismentioned, it includes both of SiCN and SiCNH unless particularlyexplicitly described otherwise.

SiC has properties similar to those of SiN while, in most cases, SiONshould rather be categorized into a silicon-oxide-based insulating film.

3. Likewise, it will also be appreciated that, although a preferredexample is shown in association with a graphical figure, a position, anattribute, or the like, the graphical figure, position, attribute, orthe like is not strictly limited thereto unless particularly explicitlydescribed otherwise or unless it is obvious from the context that thegraphical figure, position, attribute, or the like is strictly limitedthereto.

4. Further, when a specific numerical value or numerical amount ismentioned, it may be a value more or less than the specific numericalvalue unless particularly explicitly described otherwise, unless thenumerical value is theoretically limited to a given number, or unless itis obvious from the context that the numeral value is limited to a givennumber.

5. When a “wafer” is mentioned, it typically refers to a single-crystalsilicon wafer over which a semiconductor device (the same as asemiconductor integrated circuit device or an electronic device) isformed, but it will be appreciated that the “wafer” also includes acomposite wafer of an insulating substrate and a semiconductor layer orthe like, such as an epitaxial wafer, a SOI substrate, or an LCD glasssubstrate.

When a “single-crystal region” or the like is mentioned in the presentapplication, it is assumed to include an epitaxial region unlessparticularly explicitly described otherwise or unless it obviously doesnot.

6. In regard to a drift region in a power MOSFET or the like, for thepurpose of avoiding restrictions placed by a related-art silicon limitto implement a high-breakdown-voltage FET having a low ON resistance orthe like, a super junction structure has been introduced whichalternately has relatively highly doped slab-like N-type column regionsand P-type column regions in the drift region (main current path).Methods of introducing the super junction structure are roughly dividedinto three types of methods, i.e., a multi-epitaxial method, atrench-insulating-film embedding method, and a trench-fill method(trench filling method, automatic filling method, or trench epitaxialfilling method). Among them, the multi-epitaxial method in whichepitaxial growth and ion implantation are repeated multiple times hashigh process/design flexibility and accordingly complicated processsteps, resulting in high cost. In the trench-insulating-film embeddingmethod, after oblique ion implantation into trenches is performed, thetrenches are filled with a CVD (Chemical Vapor Deposition) insulatingfilm. The trench-insulating-film embedding method is simpler in terms ofprocess, but is disadvantageous in terms of area due to the area of thetrenches. By contrast, the trench-fill method has relatively lowprocess/design flexibility due to constraints on growth conditions forfilling epitaxial growth, but has the advantage of simple process steps.

In general, a super junction structure is such that, into asemiconductor region of a given conductivity type, columnar orplate-like column regions of the opposite conductivity type have beensubstantially equidistantly inserted so as to maintain a charge balance.In the present application, when a “super junction structure” formed bya trench-fill method is mentioned, it refers to, in principle, astructure in which, into a semiconductor region of a given conductivitytype, plate-like “column regions” (which are typically shaped like flatplates, but may also be curved or bent) of the opposite conductivitytype have been substantially equidistantly inserted so as to maintain acharge balance. In the embodiment, a description will be given to astructure formed by equidistantly placing P-type columns in parallel inan N-type semiconductor layer (e.g., a drift region).

In regard to a super junction structure, “orientation” indicates thelongitudinal direction of a P-type column or an N-type column includedin the super junction structure when the P-type column or N-type columnis two-dimensionally viewed correspondingly to the main surface of achip (in a plane parallel with the main surface of the chip or wafer).

Note that the super junction structure can be applied not only to apower MOSFET, but also to a drift region (alternatively, a regioncorresponding thereto or a main current path) in a general powersemiconductor device with substantially no alteration or with necessaryalternation.

7. In the present application, when a crystal plane is shown by (100) orthe like, it is assumed to include a crystal plane equivalent thereto.Likewise, when a crystal orientation is shown by <100>, <110>, or thelike, it is assumed to include a crystal orientation equivalent thereto.

DETAILS OF EMBODIMENTS

The embodiments will be described in greater detail. In each of thedrawings, the same or like parts are designated by the same or similarmarks or reference numerals, and a description thereof will not berepeated in principle.

In the accompanying drawings, hatching or the like may be omitted evenin a cross section when hatching or the like results in complicatedillustration or when the distinction between a portion to be hatched anda vacant space is distinct. In relation thereto, even atwo-dimensionally closed hole may have a background outline thereofomitted when it is obvious from the description or the like that thehole is two-dimensionally closed, and so forth. On the other hand, eventhough not shown in a cross section, a portion other than a vacant spacemay be hatched to clearly show that the hatched portion is not a vacantspace.

Note that other examples of a related-art patent application whichdiscloses a filling epitaxial technique involving the addition of carbonor the like with regard to a MOSFET having a super junction structureinclude Japanese Unexamined Patent Publication No. 2011-146429 (date ofpublication of JP application is Jul. 28, 2011).

1. Description of Vertical Planar Power MOSFET, etc. as Example ofTarget Device in Manufacturing Method of Semiconductor Device ofEmbodiment of Present Invention (See Mainly FIGS. 1 to 3)

Here, by way of example, a device having a source-drain breakdownvoltage of about 600 V will be described specifically. However, it willbe appreciated that the following embodiment is also applicable to adevice having another breakdown voltage.

FIG. 1 is a view of the entire upper surface of a semiconductor chip forillustrating the chip layout of a vertical planar power MOSFET as anexample of a target device in a manufacturing method of a semiconductordevice of an embodiment of the present invention. FIG. 2 is an enlargedplan view of the partially cut-away region R1 of the cell portion ofFIG. 1. FIG. 3 is a device cross-sectional view of a unit active cellregion corresponding to the B-B′ cross section of the partially cut-awayregion R2 of the cell portion of FIG. 2. Based on these drawings, adescription will be given to the vertical planar power MOSFET or thelike as the example of the target device in the method of manufacturingthe semiconductor device of the embodiment of the present invention.

First, based on FIGS. 1 and 2 (partially cut-away region R1 of the cellportion of FIG. 1), an overall structure of a semiconductor chip 2 willbe described. As shown in FIG. 1, in the power MOSFET element chip 2 inwhich an element is formed over a square or rectangular plate-likesilicon-based semiconductor substrate (which is a wafer before beingdivided into individual chips), a metal source electrode 21 located at acenter portion thereof occupies a major area. Under the metal sourceelectrode 21, there is a repeated-stripe device pattern region where alarge number of stripe gate electrodes 12 (gate electrodes) and stripecontact trenches 11 each extending sufficiently longer than the widththereof (or the pitch therebetween) are alternately arranged, i.e., anactive cell region 26. Here, the cell region 26 has spread undersubstantially the entire metal source region 21, and the part R1(partially cut-away region R1 of the cell portion) enclosed by thebroken line is a part thereof. On the periphery of the linear cellregion 26, there is a gate pad region 23 for extracting the gateelectrodes 12 from the periphery to the outside. Further around the gatepad region 23, an aluminum guard ring 25 is provided.

Next, using FIGS. 2 and 3, a detailed structure of the cell region 26(FIG. 1) is described. As shown in FIGS. 2 and 3, over an N⁺-type Sisingle-crystal substrate region 1 s, a drift region 3 having a superjunction structure SJ is provided. In the drift region 3, N-type columnregions NC and P-type column regions PC each having a plate-like shapeand extending in a direction perpendicular to paper surfaces with FIGS.2 and 3 are alternately formed. In this portion, the N-type columnregions NC function as N⁻-type drift regions 3 n. Note that, by addingcarbon or germanium (element having an ability to inhibit borondiffusion) to the P-type column regions PC and providing P-type columnregions PCC doped with carbon or germanium, it is possible to reduce thescattering of an impurity profile due to heat treatment, though theaddition of carbon or germanium is not mandatory. Here, as a preferredrange of the concentration of added carbon, a range of, e.g., about 0.01to 1.0 at % can be shown by way of example. Also, as a preferred rangeof the composition of germanium or the concentration of added germanium,a range of, e.g., about 5 to 30 at % can be shown by way of example.

Here, if the breakdown voltage of the drift region is assumed to beabout 600 V, as a preferred thickness thereof, e.g., about 45 μm can beshown by way of example. As a preferred width of each of the N-typecolumn regions, e.g., about 6 μm can be shown by way of example.Likewise, as a preferred width of each of the P-type column regions,e.g., about 4 μm can be shown by way of example. Note that the innerangle of the lower portion of each of the side surfaces of the N-typecolumn region is typically 88 to 90 degrees.

In the upper end portion (closer to the substrate upper surface 1 a) ofthe drift region 3, P-type body regions 6 forming channel regions areprovided. In the P-type body regions 6, N⁺-type source regions 15 areprovided. P⁺-type body contact regions 19 are provided so as to come incontact with the N⁺-type source regions 15. On the device surface 1 aside of the semiconductor substrate 2, polysilicon gate electrodes 12are provided each via a gate insulating film 7. Each of the polysilicongate electrodes 12 is covered with an interlayer insulating film 8. Inthe interlayer insulating film 8, contact trenches are formed and filledwith tungsten plugs 9 (normally via a barrier metal layer of Ti/TiN,TiW, or the like). Over the interlayer insulating film 8, thealuminum-based metal source electrode 21 (normally via a battier metallayer of Ti/TiN, TiW, or the like) is formed so as to be coupled to thetungsten plugs 9. Note that, as shown in, e.g., FIG. 42, the metalsource electrode 21 may also be formed directly without interposition ofthe tungsten plugs 9.

Over the aluminum-based metal source electrode 21, as a finalpassivation film 10, e.g., a polyimide-based insulating film 10 isformed. Note that, here, the opening of the final passivation film 10corresponding to a source pad opening is shown schematically, but a realsource pad opening is wider. Preferred examples of the final passivationfilm 10 include not only an organic single-layer film of a polyimideresin (polyimide-based resin), BCB (Benzocyclobutene), or the like, butalso an organic/inorganic composite final passivation film including aplasma TEOS (Tetraethylorthosilicate)-based silicon oxide film oranother silicon oxide film, a silicon nitride film, a polyimide-basedresin film, and the like which are shown in ascending order, aninorganic final passivation film including a silicon oxide film, asilicon nitride film, and the like which are shown in ascending order,and the like.

On the other hand, the lower end portion of the drift region 3 serves asan N⁺-type drain region 4 (i.e., the N⁺-type semiconductor substrate 1s) and, on the back surface lb side of the N⁺-type drain region 4, ametal drain electrode 5 (including, e.g., Ti/Ni/Au layers shown in orderof increasing distance from the silicon substrate).

As will be described later, the P-type body regions 6 are formed byselective epitaxial growth. This can prevent an impurity profile in eachof the P-type column regions PC and the like included in the superjunction structure SG from being scattered in contrast to the case wherethe P-type body regions 6 are formed by a typical method including ionimplantation, activation heat treatment, and the like.

2. Description of Wafer Process in Manufacturing Method (Pre-ChannelProcess) of Semiconductor Device of Embodiment of Present Invention (SeeMainly FIGS. 4 to 16)

In this section, a description will be given to an example of amanufacturing method based on a trench-fill method, which is intendedfor the device structure described in Section 1.

FIG. 4 is a device cross-sectional view (of the step of growing anN⁻-type silicon epitaxial layer) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention. FIG. 5 is a devicecross-sectional view (of the step of forming trenches to be filled withP-type columns) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the manufacturing method (pre-channelprocess) of the semiconductor device of the embodiment of the presentinvention. FIG. 6 is a device cross-sectional view (of the step of Siepitaxial growth for embedding P-type columns) during the manufacturingstep corresponding to the A-A′ cross section of the partially cut-awayregion R2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention. FIG. 7 is a devicecross-sectional view (of the step of planarization after embedding theP-type columns) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the manufacturing method (pre-channelprocess) of the semiconductor device of the embodiment of the presentinvention. FIG. 8 is a device cross-sectional view (of the step offorming trenches to be filled with P-type body regions) during themanufacturing step corresponding to the A-A′ cross section of thepartially cut-away region R2 of the cell portion of FIG. 2, which is forillustrating the manufacturing method (pre-channel process) of thesemiconductor device of the embodiment of the present invention. FIG. 9is a device cross-sectional view (of the step of selective epitaxialgrowth of the P-type body regions) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention. FIG. 10 is a devicecross-sectional view (of the step of planarization after selectiveepitaxial growth of P-type body regions) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention. FIG. 11 is a devicecross-sectional view (of the step of forming gate electrodes) during themanufacturing step corresponding to the A-A′ cross section of thepartially cut-away region R2 of the cell portion of FIG. 2, which is forillustrating the manufacturing method (pre-channel process) of thesemiconductor device of the embodiment of the present invention. FIG. 12is a device cross-sectional view (of the step of introducing N⁺-typesource regions) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the manufacturing method (pre-channelprocess) of the semiconductor device of the embodiment of the presentinvention. FIG. 13 is a device cross-sectional view (of the step offorming an interlayer insulating film) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention. FIG. 14 is a devicecross-sectional view (of the step of forming contact trenches) duringthe manufacturing step corresponding to the A-A′ cross section of thepartially cut-away region R2 of the cell portion of FIG. 2, which is forillustrating the manufacturing method (pre-channel process) of thesemiconductor device of the embodiment of the present invention. FIG. 15is a device cross-sectional view (of the step of introducing P⁺-typebody contact regions) during the manufacturing step corresponding to theA-A′ cross section of the partially cut-away region R2 of the cellportion of FIG. 2, which is for illustrating the manufacturing method(pre-channel process) of the semiconductor device of the embodiment ofthe present invention. FIG. 16 is a device cross-sectional view (of thestep of forming source metal electrodes, etc.) during the manufacturingstep corresponding to the A-A′ cross section of the partially cut-awayregion R2 of the cell portion of FIG. 2, which is for illustrating themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention. Based on these drawings, adescription will be given to a wafer process in the manufacturing method(pre-channel process) of the semiconductor device of the embodiment ofthe present invention.

First, as shown in FIG. 4, a semiconductor wafer 1 is prepared in which,over the N⁺-type single-crystal silicon substrate is (which is, e.g., a200-φ wafer here, but the diameter of the wafer may also be any of 150φ, 300 φ, and 450 φ) doped with, e.g., antimony (at a concentration ofthe order of, e.g., 10¹⁸ to 10¹⁸/cm³), an N-type epitaxial layer 1 e(drift region at a concentration of the order of, e.g., about 10¹⁵/cm³)doped with phosphorus and having a thickness of about 45 μm (on theassumption that a breakdown voltage is about 600 V) is formed. Note thatthe thickness of the N⁺-type single-crystal silicon substrate is, e.g.,about 500 to 1000 μm.

Next, as shown in FIG. 5, over the device surface 1 a (main surfaceopposite to the back surface 1 b) of the semiconductor wafer 1, a hardmask 17 for forming trenches to be filled with P-type columns made of,e.g., p-TEOS (Plasma-Tetraethylorthosilicate) or the like is formed(note that the trenches may also be formed using a resist as a maskwithout using the hard mask).

Next, using the patterned hard mask 17 for forming trenches to be filledwith P-type columns as a mask, the N-type epitaxial layer 1 e and thelike are dry-etched (as an etching gas, a SF₆/O₂-based or HBr/Cl-basedgas can be shown by way of example) to form trenches 16 to be filledwith P-type columns. Subsequently, the hard mask film 17 which is nolonger needed is removed using, e.g., a fluoric-acid-based etchant for asilicon oxide film.

Next, as shown in FIG. 6, filling epitaxial growth is performed for thetrenches 16 to be filled with P-type columns to form a P-type Siepitaxial layer 18 for embedded P-type columns (at a concentration ofthe order of, e.g., about 10¹⁵/cm³). Examples of conditions for thefilling epitaxial growth that can be shown include a barometric pressureof 5 kPa to 110 kPa in a deposition chamber, a deposition temperature of900 to 1100° C., a silicon source gas of DCS, i.e., dichlorosilane, anetchant gas of hydrochloride, and a boron dopant source gas of diborane.

Note that, when the P-type column regions PCC doped with germanium orcarbon are to be formed, either of the followings is added depending onwhich one of carbon and germanium is to be added to the foregoing. Thatis, a carbon dopant source gas of, e.g., MMS (Monomethylsilane) and agermanium dopant source gas of monogerman can be shown by way ofexample.

Next, as shown in FIG. 7, the P-type Si epitaxial layer 18 for embeddedP-type columns outside the trenches 16 to be filled with P-type columnsis removed by a planarization step, e.g., CMP (Chemical MechanicalPolishing), while the surface 1 a of the semiconductor wafer 1 isplanarized. Thus, the P-type column regions PC and the N-type columnregion NC are formed.

Note that, here, a super junction structure as shown in FIG. 7 may alsobe formed not only by the trench-fill method, but also by amulti-epitaxial method.

Next, as shown in FIG. 8, over the device surface 1 a of the wafer 1, ahard mask 20 for processing for formation of trenches to be filled withP-type body regions, such as a TEOS-based silicon oxide film, is formedby, e.g., typical lithography. At this time, the widths of openingscorresponding to trenches in the hard mask 20 for processing forformation of trenches to be filled with P-type body regions are, e.g.,about 1 to 2 μm.

Next, using the hard mask 20 for processing for formation of trenches tobe filled with P-type body regions, trenches 22 to be filled with P-typebody regions (trenches to be filled with channel regions) are formed by,e.g., dry etching. As a preferred example of a dry etching method (firstmethod, i.e., a full dry etching method) for the trenches to be filledwith P-type body regions, a method including the following first andsecond steps can be shown by way of example. That is, in the first step(1), the semiconductor substrate is etched by, e.g., about 1 μm byanisotropic dry etching. Preferred examples of conditions for theetching treatment and the like which can be shown include the use of ahigh-density plasma etching apparatus such as an ICP (InductivelyCoupled Plasma) etcher as an etching apparatus, a processing barometricpressure of, e.g., about 4 Pa, gas conditions, flow rates, and the likeof, e.g., Ar, SF₆, and O₂ which are 200 sccm, 100 sccm, and 70 sccm, anICP excitation power of, e.g., 150 W, a power applied to a stage of,e.g., 20 W, and the like. Note that the etching apparatus may also be anECR (Electron Cyclotron Resonance) etcher (high-density plasma etchingapparatus) or another form of dry etcher. However, in the case of usingthe high-density plasma etching apparatus, a high selectivity can beensured. Subsequently, in the second step (2), the semiconductorsubstrate is further etched by, e.g., about 1 μm by isotropic dryetching. Preferred examples of conditions for the etching treatment andthe like which can be shown include the use of a high-density plasmaetching apparatus such as an ICP (Inductively Coupled Plasma) etcher asan etching apparatus, a processing barometric pressure of, e.g., about10 Pa, gas conditions, flow rates, and the like of, e.g., Ar, CF₄, andO₂ which are 50 sccm, 100 sccm, and 50 sccm, an ICP excitation power of,e.g., 80 W, a power applied to a stage of, e.g., 10 W, and the like.Note that the etching apparatus may also be an ECR (Electron CyclotronResonance) etcher (high-density plasma etching apparatus) or anotherform of dry etcher. However, in the case of using the high-densityplasma etching apparatus, a high selectivity can be ensured.

As a preferred example of a dry etching method (second method, i.e., adry & wet etching method) for the trenches to be filled with P-type bodyregions, a method including the following first and second steps can beshown by way of example. That is, in the first step (1), thesemiconductor substrate is etched by, e.g., about 1 μm by anisotropicdry etching. Preferred examples of conditions for the etching treatmentand the like which can be shown include the use of a high-density plasmaetching apparatus such as an ICP (Inductively Coupled Plasma) etcher asan etching apparatus, a processing barometric pressure of, e.g., about 4Pa, gas conditions, flow rates, and the like of, e.g., Ar, SF₆, and O₂which are 200 sccm, 100 sccm, and 70 sccm, an ICP excitation power of,e.g., 150 W, a power applied to a stage of, e.g., 20 W, and the like.Note that the etching apparatus may also be an ECR (Electron CyclotronResonance) etcher (high-density plasma etching apparatus) or anotherform of dry etcher. However, in the case of using the high-densityplasma etching apparatus, a high selectivity can be ensured.Subsequently, in the second step (2), the semiconductor substrate isfurther etched by, e.g., about 1 μm by wet etching (isotropic etching).Preferred examples of an etchant which can be shown include an aqueoussolution of a fluoric acid, a nitric acid, an acetic acid, or the like.

As a preferred example of a dry etching method (third method, i.e., afull wet etching method) for the trenches to be filled with P-type bodyregions, the following method can be shown by way of example. That is,the method is implemented by one step of anisotropic wet etching usingan anisotropic wet etchant containing KOH or the like. In this case,each of the sidewalls exhibits a (111) plane having an angle of 54degrees between itself and a horizontal plane (plane parallel with themain surface of the wafer).

Next, as shown in FIG. 9, the trenches 23 to be filled with P-type bodyregions are each filled with a boron-doped Si epitaxial layer byselective epitaxial growth. As preferred examples of conditions for theselective epitaxial growth, the following can be shown. That is, aprocessing temperature is, e.g., about 750 to 900° C. (or 750 to 850°C.), a processing barometric pressure is, e.g., about 1.3 kPa to 101kPa, a deposition time is, e.g., 5 to 30 minutes, and gas conditions,flow rates, and the like of, e.g., H₂, DCS (Dichlorosilane), HCl, andB₂H₆ are about 10000 to 20000 sccm, 300 to 500 sccm, 300 to 800 sccm,and 100 to 500 sccm. Note that, when there is a portion in which Si:Clayers are to be formed, the foregoing MMS (Monomethylsilane) is furtheradded in the portion. The flow rate is adjusted within a range of, e.g.,about 50 to 100 sccm such that the concentration of carbon is, e.g.,about 0.05 at % to 0.1 at %. As a precursor for the selective epitaxialgrowth, not only the DCS, but also TCS (Trichlorosilane) can also beused. If a consideration is given also to these precursors, a preferredrange of a temperature for the foregoing selective epitaxial growth isabout 600 to 900° C. (more preferably, about 650 to 850° C.). Apreferred range of the processing barometric pressure can be adjusted tobe about 660 Pa to an atmospheric pressure.

Next, as shown in FIG. 10, by a planarization step, e.g., CMP, theentire hard mask 20 for processing for formation of trenches to befilled with P-type body regions and a part of the P-type Si selectiveepitaxial layer 23 are removed. As a result, the P-type Si selectiveepitaxial layer 23 serves as the P-type body regions (channel regions)6.

Next, as shown in FIG. 11, in the state shown in FIG. 10, the gateinsulating film 7 is formed over substantially the entire device surface1 a (first main surface) of the wafer 1 by, e.g., thermal oxidation orthe like. Then, over the gate insulating film 7 over substantially theentire device surface 1 a of the wafer 1, a polysilicon film 12 isdeposited as a gate electrode material or the like by, e.g., CVD(Chemical Vapor Deposition). Then, by patterning the polysilicon film 12and the gate insulating film 7 by, e.g., typical lithography, thepolysilicon film 12 is processed to form the gate electrodes 12. Then,over the device surface 1 a of the wafer 1 and the surfaces (uppersurfaces and side surfaces) of the gate electrodes 12, a surface oxidefilm 24 is deposited by, e.g., thermal oxidation, CVD, or the like.

Next, as shown in FIG. 12, over the device surface 1 a of the wafer 1, aresist film 28 for introducing N⁺-type source regions is formed by,e.g., typical lithography and, using the resist film 28 as a mask, aresist film 15 for introducing N⁺-type source regions is introduced intothe surface area of the semiconductor region by, e.g., ion implantation.Thereafter, the resist film 15 for introducing N⁺-type source regionswhich is no longer needed is removed by, e.g., ashing or the like, andthen activation anneal is performed.

Next, as shown in FIG. 13, over substantially the entire surface of thewafer 1 on the device surface 1 a side, the interlayer insulating film 8formed of a silicon-oxide-based insulating film or the like is depositedby, e.g., CVD.

Next, as shown in FIG. 14, over the interlayer insulating film 8, aresist film 29 for contact trench processing is formed by, e.g., typicallithography (note that a hard mask of a silicon oxide film, a siliconnitride film, or the like may also be used). Then, using the resist filmfor contact trench processing as a mask, the contact trenches 11 areopened by, e.g., anisotropic dry etching and extended as necessary inthe semiconductor substrate.

Next, as shown in FIG. 15, into the surface area of the semiconductorsubstrate at the bottom of each of the contact trenches 11, the P⁺-typebody contact regions 19 are introduced by, e.g., ion implantation.Thereafter, the resist film 29 for contact trench processing is removedby, e.g., ashing or the like, and then activation anneal is performed.

Next, as shown in FIG. 16, over the interlayer insulating film 8 andsubstantially the entire inner surface of each of the contact trenches11, a titanium film and a titanium nitride film which are relativelythin (thinner than a tungsten film described later) are successivelydeposited as a barrier metal film or the like by, e.g., sputteringdeposition. Then, over the barrier metal film over substantially theentire device surface 1 a of the wafer 1, the tungsten film is depositedby, e.g., CVD so as to fill the contact trenches 11. Then, by removingthe barrier metal film and the tungsten film outside the contact holes11 by an etch-back process or CMP (Chemical Mechanical Polishing), thecontact trenches 11 are filled with the tungsten plugs 9. Then, oversubstantially the entire surface of the wafer 1 on the device surface 1a side, a barrier metal film (such as a titanium film, a titaniumfilm/nitride film, a TiW film or the like) which is relatively thin(thinner than an aluminum-based metal film described later) is depositedby, e.g., sputtering deposition. Then, over substantially the entiresurface of the barrier metal film, an aluminum-based metal film isdeposited by, e.g., sputtering deposition. Then, by, e.g., typicallithography, a metal electrode film including the barrier metal film,the aluminum-based metal film, and the like is processed to form thesource metal electrode 21 and the like. Then, over substantially theentire surface of the wafer 1 on the device surface 1 a side, e.g., aphotosensitive polyimide-based insulating film is deposited as the finalpassivation film 10 by, e.g., coating. Then, by processing thephotosensitive polyimide-based insulating film by typical lithography,the final passivation film 10 is formed into a pattern (alternatively,the patterning may also be performed using a non-photosensitivepolyimide-based insulating film). Note that, here, the opening of thefinal passivation film 10 corresponding to a source pad opening is shownschematically, but a real source pad opening is wider. Preferredexamples of the final passivation film 10 include not only an organicsingle-layer film of a polyimide resin (polyimide-based resin), BCB(Benzocyclobutene), or the like, but also an organic/inorganic compositefinal passivation film including a plasma TEOS(Tetraethylorthosilicate)-based silicon oxide film or another siliconoxide film, a silicon nitride film, a polyimide-based resin film, andthe like which are shown in ascending order, an inorganic finalpassivation film including a silicon oxide film, a silicon nitride film,and the like which are shown in ascending order, and the like. Then, theback surface 1 b of the wafer 1 is subjected to back grinding treatmentto reduce the thickness of the wafer (having an original thickness ofabout 500 to 1000 μm) to about 100 to 300 μm. Then, the back-surfacemetal electrode 5 is formed by sputtering deposition or the like.Examples of the configuration of the back-surface metal electrode 5which can be shown include that of a film including a titanium film, anickel film, a gold film, and the like which are shown in order ofincreasing distance from the silicon substrate 1 s. Thereafter, bydicing, the wafer 1 is divided into individual chips to provide discretedevices 2 (semiconductor chips).

3. Description of Modification (Pre-Gate Process) of Wafer Process inManufacturing Method of Semiconductor Device of Embodiment of PresentInvention (See Mainly FIGS. 17 to 23)

In this section, a description will be given to another example based ona trench-fill method different from that of the manufacturing methoddescribed in Section 2. However, it will be appreciated that themanufacturing method based on the trench-fill method intended for thedevice structure described in Section 1 is not limited to the twoexamples, and can be variously modified.

The modification is related to FIGS. 8 to 12. Since the portionsdescribed using FIGS. 4 to 7 and 13 to 16 are basically unchanged, adescription will be given below only to different portions in principle.

FIG. 17 is a device cross-sectional view (of the step of forming a gateinsulating film, etc.) during the manufacturing step corresponding tothe A-A′ cross section of the partially cut-away region R2 of the cellportion of FIG. 2, which is for illustrating a modification (pre-gateprocess) of a wafer process in the manufacturing method of thesemiconductor device of the embodiment of the present invention. FIG. 18is a device cross-sectional view (of the step of gate electrodeprocessing) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the modification (pre-gate process) ofthe wafer process in the manufacturing method of the semiconductordevice of the embodiment of the present invention. FIG. 19 is a devicecross-sectional view (of the step of forming a surface oxide film, etc.)during the manufacturing step corresponding to the A-A′ cross section ofthe partially cut-away region R2 of the cell portion of FIG. 2, which isfor illustrating the modification (pre-gate process) of the waferprocess in the manufacturing method of the semiconductor device of theembodiment of the present invention. FIG. 20 is a device cross-sectionalview (of the step of forming trenches to be filled with P-type bodyregions) during the manufacturing step corresponding to the A-A′ crosssection of the partially cut-away region R2 of the cell portion of FIG.2, which is for illustrating the modification (pre-gate process) of thewafer process in the manufacturing method of the semiconductor device ofthe embodiment of the present invention. FIG. 21 is a devicecross-sectional view (of the step of selective epitaxial growth ofP-type body regions) during the manufacturing step corresponding to theA-A′ cross section of the partially cut-away region R2 of the cellportion of FIG. 2, which is for illustrating the modification (pre-gateprocess) of the wafer process in the manufacturing method of thesemiconductor device of the embodiment of the present invention. FIG. 22is a device cross-sectional view (of the step of introducing N⁺-typesource regions) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the modification (pre-gate process) ofthe wafer process in the manufacturing method of the semiconductordevice of the embodiment of the present invention. FIG. 23 is a devicecross-sectional view (of the step of removing a resist film forintroducing N⁺-type source regions) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themodification (pre-gate process) of the wafer process in themanufacturing method of the semiconductor device of the embodiment ofthe present invention. Based on these drawings, a description will begiven to the modification (pre-gate process) of the wafer process in themanufacturing method of the semiconductor device of the embodiment ofthe present invention.

Next, as shown in FIG. 17, in the state shown in FIG. 7, the gateinsulating film 7 is formed over substantially the entire device surface1 a (first main surface) of the wafer 1 by, e.g., thermal oxidation orthe like. Then, over the gate insulating film 7 over substantially theentire device surface 1 a of the wafer 1, the polysilicon film 12 isdeposited as a gate electrode material or the like by, e.g., CVD(Chemical Vapor Deposition). Then, by patterning the polysilicon film 12and the gate insulating film 7 by, e.g., typical lithography, thepolysilicon film 12 is processed to form the gate electrodes 12. Then,by typical lithography, over the polysilicon film 12, a resist film 32for gate electrode processing is formed.

Next, as shown in FIG. 18, the polysilicon film 12 and the gateinsulating film 7 are processed by, e.g., anisotropic dry etching toform the gate electrodes 12. Thereafter, the resist film 32 for gateelectrode processing which is no longer needed is removed by, e.g.,ashing or the like.

Next, as shown in FIG. 19, over the device surface 1 a of the wafer 1and the surfaces (upper surfaces and side surfaces) of the gateelectrodes 12, the surface oxide film 24 is deposited by, e.g., thermaloxidation, CVD, or the like. Then, by, e.g., typical lithography, on thedevice surface 1 a side of the wafer 1, a resist film 20 r forprocessing for formation of trenches to be filled with P-type bodyregions is formed.

Next, as shown in FIG. 20, over the device surface 1 a of the wafer 1,the hard mask 20 for processing for formation of trenches to be filledwith P-type body regions, such as, e.g., a TEOS-based silicon oxidefilm, is formed by, e.g., typical lithography. At this time, the widthsof openings corresponding to trenches in the hard mask 20 for processingfor formation of trenches to be filled with P-type body regions are,e.g., about 1 to 2 μm.

Next, using the hard mask 20 for processing for formation of trenches tobe filled with P-type body regions, the trenches 22 to be filled withP-type body regions (trenches to be filled with channel regions) areformed by, e.g., dry etching. As a preferred example of a dry etchingmethod (first method, i.e., a full dry etching method) for the trenchesto be filled with P-type body regions, a method including the followingfirst and second steps can be shown by way of example. That is, in thefirst step (1), the semiconductor substrate is etched by, e.g., about 1μm by anisotropic dry etching. Preferred examples of conditions for theetching treatment and the like which can be shown include the use of ahigh-density plasma etching apparatus such as an ICP (InductivelyCoupled Plasma) etcher as an etching apparatus, a processing barometricpressure of, e.g., about 4 Pa, gas conditions, flow rates, and the likeof, e.g., Ar, SF₆, and O₂ which are 200 sccm, 100 sccm, and 70 sccm, anICP excitation power of, e.g., 150 W, a power applied to a stage of,e.g., 20 W, and the like. Note that the etching apparatus may also be anECR (Electron Cyclotron Resonance) etcher (high-density plasma etchingapparatus) or another form of dry etcher. However, in the case of usingthe high-density plasma etching apparatus, a high selectivity can beensured. Subsequently, in the second step (2), the semiconductorsubstrate is further etched by, e.g., about 1 μm by isotropic dryetching. Preferred examples of conditions for the etching treatment andthe like which can be shown include the use of a high-density plasmaetching apparatus such as an ICP (Inductively Coupled Plasma) etcher asan etching apparatus, a processing barometric pressure of, e.g., about10 Pa, gas conditions, flow rates, and the like of, e.g., Ar, CF₄, andO₂ which are 50 sccm, 100 sccm, and 50 sccm, an ICP excitation power of,e.g., 80 W, a power applied to a stage of, e.g., 10 W, and the like.Note that the etching apparatus may also be an ECR (Electron CyclotronResonance) etcher (high-density plasma etching apparatus) or anotherform of dry etcher. However, in the case of using the high-densityplasma etching apparatus, a high selectivity can be ensured.

As a preferred example of a dry etching method (second method, i.e., adry & wet etching method) for the trenches to be filled with P-type bodyregions, a method including the following first and second steps can beshown by way of example. That is, in the first step (1), thesemiconductor substrate is etched by, e.g., about 1 μm by anisotropicdry etching. Preferred examples of conditions for the etching treatmentand the like which can be shown include the use of a high-density plasmaetching apparatus such as an ICP (Inductively Coupled Plasma) etcher asan etching apparatus, a processing barometric pressure of, e.g., about 4Pa, gas conditions, flow rates, and the like of, e.g., Ar, SF₆, and O₂which are 200 sccm, 100 sccm, and 70 sccm, an ICP excitation power of,e.g., 150 W, a power applied to a stage of, e.g., 20 W, and the like.Note that the etching apparatus may also be an ECR (Electron CyclotronResonance) etcher (high-density plasma etching apparatus) or anotherform of dry etcher. However, in the case of using the high-densityplasma etching apparatus, a high selectivity can be ensured.Subsequently, in the second step (2), the semiconductor substrate isfurther etched by, e.g., about 1 μm by wet etching (isotropic etching).Preferred examples of an etchant which can be shown include an aqueoussolution of a fluoric acid, a nitric acid, an acetic acid, or the like.

As a preferred example of a dry etching method (third method, i.e., afull wet etching method) for the trenches to be filled with P-type bodyregions, the following method can be shown by way of example. That is,the method is implemented by one step of anisotropic wet etching usingan anisotropic wet etchant containing KOH or the like. In this case,each of the sidewalls exhibits a (111) plane having an angle of 54degrees between itself and a horizontal plane (plane parallel with themain surface of the wafer).

Next, as shown in FIG. 21, the trenches 23 to be filled with P-type bodyregions are each filled with a boron-doped Si epitaxial layer byselective epitaxial growth. As preferred examples of conditions for theselective epitaxial growth, the following can be shown. That is, aprocessing temperature is, e.g., about 750 to 900° C. (or 750 to 850°C.), a processing barometric pressure of, e.g., about 1.3 kPa to 101kPa, a deposition time of, e.g., 5 to 30 minutes, and gas conditions,flow rates, and the like of, e.g., H₂, DCS (Dichlorosilane), HCl, andB₂H₆ are about 10000 to 20000 sccm, 300 to 500 sccm, 300 to 800 sccm,and 100 to 500 sccm. Note that, when there is a portion in which Si:Clayers are to be formed, the foregoing MMS (Monomethylsilane) is furtheradded in the portion. The flow rate is adjusted within a range of, e.g.,about 50 to 100 sccm such that the concentration of carbon is, e.g.,about 0.05 at % to 0.1 at %.

Next, as shown in FIG. 22, over the device surface 1 a of the wafer 1,the resist film 28 for introducing N⁺-type source regions is formed by,e.g., typical lithography and, using the resist film 28 as a mask, theresist film 15 for introducing N⁺-type source regions are introducedinto the surface area of the semiconductor region by, e.g., ionimplantation. Thereafter, the resist film 15 for introducing N⁺-typesource regions which is no longer needed is removed by, e.g., ashing orthe like, and activation anneal is performed, as shown in FIG. 23.

Thereafter, the process moves to the step shown in FIG. 13, and theprocessings shown in FIGS. 13 to 16 are performed.

4. Description of Modification (Multi-Epitaxial Method) of Wafer Processin Manufacturing Method (Pre-Channel Process) of Semiconductor Device ofEmbodiment of Present Invention (See Mainly FIGS. 24 to 36)

In this section, a description will be given to an example of themanufacturing method based on the multi-epitaxial method, which isintended for the device structure described in Section 1. However, themanufacturing method based on the multi-epitaxial method intended forthe device structure described in Section 1 is not limited to the twoexamples, and can be variously modified.

The example is related to a modification of a process related to FIGS. 4to 7 of Section 2 and otherwise basically the same. A description willbe given primarily to a case where the multi-epitaxial method is appliedto the pre-channel process (Section 2), but it will be appreciated thatthe multi-epitaxial method is also similarly applicable to the pre-gateprocess (Section 3).

FIG. 24 is a device cross-sectional view (of the step of growing afirst-level N⁻-type silicon epitaxial layer) during the manufacturingstep corresponding to the A-A′ cross section of the partially cut-awayregion R2 of the cell portion of FIG. 2, which is for illustrating amodification (multi-epitaxial method) of a wafer process in themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention. FIG. 25 is a devicecross-sectional view (of the step of multi-stage implantation of boronions into the first-level N⁻-type silicon epitaxial layer) during themanufacturing step corresponding to the A-A′ cross section of thepartially cut-away region R2 of the cell portion of FIG. 2, which is forillustrating the modification (multi-epitaxial method) of the waferprocess in the manufacturing method (pre-channel process) of thesemiconductor device of the embodiment of the present invention. FIG. 26is a device cross-sectional view (of the step of multi-stageimplantation of boron ions into a second-level N⁻-type silicon epitaxiallayer, etc.) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the modification (multi-epitaxialmethod) of the wafer process in the manufacturing method (pre-channelprocess) of the semiconductor device of the embodiment of the presentinvention. FIG. 27 is a device cross-sectional view (of the step ofactivation anneal after multi-stage implantation of boron ions into athird-level N⁻-type silicon epitaxial layer, etc.) during themanufacturing step corresponding to the A-A′ cross section of thepartially cut-away region R2 of the cell portion of FIG. 2, which is forillustrating the modification (multi-epitaxial method) of the waferprocess in the manufacturing method (pre-channel process) of thesemiconductor device of the embodiment of the present invention. FIG. 28is a device cross-sectional view (of the step of forming trenches to befilled with P-type body regions) during the manufacturing stepcorresponding to the A-A′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2, which is for illustrating themodification (multi-epitaxial method) of the wafer process in themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention. FIG. 29 is a devicecross-sectional view (of the step of selective epitaxial growth of theP-type body regions) during the manufacturing step corresponding to theA-A′ cross section of the partially cut-away region R2 of the cellportion of FIG. 2, which is for illustrating the modification(multi-epitaxial method) of the wafer process in the manufacturingmethod (pre-channel process) of the semiconductor device of theembodiment of the present invention. FIG. 30 is a device cross-sectionalview (of the step of planarization after the selective epitaxial growthof P-type body regions) during the manufacturing step corresponding tothe A-A′ cross section of the partially cut-away region R2 of the cellportion of FIG. 2, which is for illustrating the modification(multi-epitaxial method) of the wafer process in the manufacturingmethod (pre-channel process) of the semiconductor device of theembodiment of the present invention. FIG. 31 is a device cross-sectionalview (of the step of forming gate electrodes) during the manufacturingstep corresponding to the A-A′ cross section of the partially cut-awayregion R2 of the cell portion of FIG. 2, which is for illustrating themodification (multi-epitaxial method) of the wafer process in themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention. FIG. 32 is a devicecross-sectional view (of the step of introducing N⁺-type source regions)during the manufacturing step corresponding to the A-A′ cross section ofthe partially cut-away region R2 of the cell portion of FIG. 2, which isfor illustrating the modification (multi-epitaxial method) of the waferprocess in the manufacturing method (pre-channel process) of thesemiconductor device of the embodiment of the present invention. FIG. 33is a device cross-sectional view (of the step of forming an interlayerinsulating film) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the modification (multi-epitaxialmethod) of the wafer process in the manufacturing method (pre-channelprocess) of the semiconductor device of the embodiment of the presentinvention. FIG. 34 is a device cross-sectional view (of the step offorming contact trenches) during the manufacturing step corresponding tothe A-A′ cross section of the partially cut-away region R2 of the cellportion of FIG. 2, which is for illustrating the modification(multi-epitaxial method) of the wafer process in the manufacturingmethod (pre-channel process) of the semiconductor device of theembodiment of the present invention. FIG. 35 is a device cross-sectionalview (of the step of introducing P⁺-type body contact regions) duringthe manufacturing step corresponding to the A-A′ cross section of thepartially cut-away region R2 of the cell portion of FIG. 2, which is forillustrating the modification (multi-epitaxial method) of the waferprocess in the manufacturing method (pre-channel process) of thesemiconductor device of the embodiment of the present invention. FIG. 36is a device cross-sectional view (of the step of forming a source metalelectrode, etc.) during the manufacturing step corresponding to the A-A′cross section of the partially cut-away region R2 of the cell portion ofFIG. 2, which is for illustrating the modification (multi-epitaxialmethod) of the wafer process in the manufacturing method (pre-channelprocess) of the semiconductor device of the embodiment of the presentinvention. Based on these drawings, a description will be given to themodification (multi-epitaxial method) of the wafer process in themanufacturing method (pre-channel process) of the semiconductor deviceof the embodiment of the present invention.

As shown in FIG. 24, the N⁺-type single-crystal silicon substrate is(which is, e.g., a 200-φ wafer here, but the diameter of the wafer mayalso be any of 150 φ, 300 φ, and 450 φ) doped with, e.g., antimony (at aconcentration of the order of, e.g., 10¹⁸ to 10¹⁹/cm³) is prepared. Notethat the thickness of the N⁺-type single-crystal silicon substrate isis, e.g., about 500 to 1000 μm. Next, over the device surface 1 a (firstmain surface) of the N⁺-type single-crystal silicon substrate is(semiconductor wafer 1), a first-level N⁻-type silicon epitaxial layer 1e 1 (at a concentration of the order of, e.g., about 10¹⁵/cm³) dopedwith phosphorus and having a thickness of, e.g., about 15 μm (on theassumption that a breakdown voltage is about 600 V) is formed.

Next, as shown in FIG. 25, e.g., ion implantation of boron ions or thelike is repeatedly performed to different depths to introduce amulti-level boron ion implantation region 31. Thereafter, surfaceplanarization is performed as necessary.

Next, as shown in FIG. 26, the process shown in FIGS. 24 and 25 isrepeated, e.g., about three times to successively form a second-levelN⁻-type silicon epitaxial layer 1 e 2 (at a concentration of the orderof, e.g., 10¹⁵/cm³) and a third-level N⁻-type silicon epitaxial layer 1e 3 (at a concentration of the order of, e.g., 10¹⁵/cm³) over thefirst-level N⁻-type silicon epitaxial layer 1 e 1. As a result, thefirst-level N⁻-type silicon epitaxial layer 1 e 1, the second-levelN⁻-type silicon epitaxial layer 1 e 2, and the third-level N⁻-typesilicon epitaxial layer 1 e 3, i.e., the multi-level boron ionimplantation region 31 in the N⁻-type silicon epitaxial layer 1 e servesas each of the integral P-type column regions PC. On the other hand, theportions without the P-type column regions PC serve as the N-type columnregion NC.

Next, as shown in FIG. 27, activation anneal of the introducedimpurities is performed, and surface planarization is performed asnecessary.

Next, as shown in FIG. 28, over the device surface 1 a of the wafer 1,the hard mask 20 for processing for formation of trenches to be filledwith P-type body regions, such as a TEOS-based silicon oxide film, isformed by, e.g., typical lithography. At this time, the widths ofopenings corresponding to trenches in the hard mask 20 for processingfor formation of trenches to be filled with P-type body regions are,e.g., about 1 to 2 μm.

Next, using the hard mask 20 for processing for formation of trenches tobe filled with P-type body regions, the trenches 22 to be filled withP-type body regions (trenches to be filled with channel regions) areformed by, e.g., dry etching. As a preferred example of a dry etchingmethod (first method, i.e., a full dry etching method) for the trenchesto be filled with P-type body regions, a method including the followingfirst and second steps can be shown by way of example. That is, in thefirst step (1), the semiconductor substrate is etched by, e.g., about 1μm by anisotropic dry etching. Preferred examples of conditions for theetching treatment and the like which can be shown include the use of ahigh-density plasma etching apparatus such as an ICP (InductivelyCoupled Plasma) etcher as an etching apparatus, a processing barometricpressure of, e.g., about 4 Pa, gas conditions, flow rates, and the likeof, e.g., Ar, SF₆, and O₂ which are 200 sccm, 100 sccm, and 70 sccm, anICP excitation power of, e.g., 150 W, a power applied to a stage of,e.g., 20 W, and the like. Note that the etching apparatus may also be anECR (Electron Cyclotron Resonance) etcher (high-density plasma etchingapparatus) or another form of dry etcher. However, in the case of usingthe high-density plasma etching apparatus, a high selectivity can beensured. Subsequently, in the second step (2), the semiconductorsubstrate is further etched by, e.g., about 1 μm by isotropic dryetching. Preferred examples of conditions for the etching treatment andthe like which can be shown include the use of a high-density plasmaetching apparatus such as an ICP (Inductively Coupled Plasma) etcher asan etching apparatus, a processing barometric pressure of, e.g., about10 Pa, gas conditions, flow rates, and the like of, e.g., Ar, CF₄, andO₂ which are 50 sccm, 100 sccm, and 50 sccm, an ICP excitation power of,e.g., 80 W, a power applied to a stage of, e.g., 10 W, and the like.Note that the etching apparatus may also be an ECR (Electron CyclotronResonance) etcher (high-density plasma etching apparatus) or anotherform of dry etcher. However, in the case of using the high-densityplasma etching apparatus, a high selectivity can be ensured.

As a preferred example of a dry etching method (second method, i.e., adry & wet etching method) for the trenches to be filled with P-type bodyregions, a method including the following first and second steps can beshown by way of example. That is, in the first step (1), thesemiconductor substrate is etched by, e.g., about 1 μm by anisotropicdry etching. Preferred examples of conditions for the etching treatmentand the like which can be shown include the use of a high-density plasmaetching apparatus such as an ICP (Inductively Coupled Plasma) etcher asan etching apparatus, a processing barometric pressure of, e.g., about 4Pa, gas conditions, flow rates, and the like of, e.g., Ar, SF₆, and O₂which are 200 sccm, 100 sccm, and 70 sccm, an ICP excitation power of,e.g., 150 W, a power applied to a stage of, e.g., 20 W, and the like.Note that the etching apparatus may also be an ECR (Electron CyclotronResonance) etcher (high-density plasma etching apparatus) or anotherform of dry etcher. However, in the case of using the high-densityplasma etching apparatus, a high selectivity can be ensured.Subsequently, in the second step (2), the semiconductor substrate isfurther etched by, e.g., about 1 μm by wet etching (isotropic etching).Preferred examples of an etchant which can be shown include an aqueoussolution of a fluoric acid, a nitric acid, an acetic acid, or the like.

As a preferred example of a dry etching method (third method, i.e., afull wet etching method) for the trenches to be filled with P-type bodyregions, the following method can be shown by way of example. That is,the method is implemented by one step of anisotropic wet etching usingan anisotropic wet etchant containing KOH or the like. In this case,each of the sidewalls exhibits a (111) plane having an angle of 54degrees between itself and a horizontal plane (plane parallel with themain surface of the wafer).

Next, as shown in FIG. 29, the trenches 23 to be filled with P-type bodyregions are each filled with a boron-doped Si epitaxial layer byselective epitaxial growth. As preferred examples of conditions for theselective epitaxial growth, the following can be shown. That is, aprocessing temperature is, e.g., about 750 to 900° C. (or about 750 to850° C.), a processing barometric pressure is, e.g., about 1.3 kPa to101 kPa, a deposition time is, e.g., 5 to 30 minutes, and gasconditions, flow rates, and the like of, e.g., H₂, DCS (Dichlorosilane),HCl, and B₂H₆ are about 10000 to 20000 sccm, 300 to 500 sccm, 300 to 800sccm, and 100 to 500 sccm. Note that, when there is a portion in whichSi:C layers are to be formed, the foregoing MMS (Monomethylsilane) isfurther added in the portion. The flow rate is adjusted within a rangeof, e.g., about 50 to 100 sccm such that the concentration of carbon is,e.g., about 0.05 at % to 0.1 at %.

Next, as shown in FIG. 30, by a planarization step, e.g., CMP, theentire hard mask 20 for processing for formation of trenches to befilled with P-type body regions and a part of the P-type Si selectiveepitaxial layer 23 are removed. As a result, the P-type Si selectiveepitaxial layer 23 serves as the P-type body regions (channel regions)6.

Next, as shown in FIG. 31, in the state shown in FIG. 30, the gateinsulating film 7 is formed over substantially the entire device surface1 a (first main surface) of the wafer 1 by, e.g., thermal oxidation orthe like. Then, over the gate insulating film 7 over substantially theentire device surface 1 a of the wafer 1, the polysilicon film 12 isdeposited as a gate electrode material or the like by, e.g., CVD. Then,by patterning the polysilicon film 12 and the gate insulating film 7 by,e.g., typical lithography, the polysilicon film 12 is processed to formthe gate electrodes 12. Then, over the device surface 1 a of the wafer 1and the surfaces (upper surfaces and side surfaces) of the gateelectrodes 12, the surface oxide film 24 is deposited by, e.g., thermaloxidation, CVD, or the like.

Next, as shown in FIG. 32, over the device surface 1 a of the wafer 1,the resist film 28 for introducing N⁺-type source regions is formed by,e.g., typical lithography and, using the resist film 28 as a mask, theresist film 15 for introducing N⁺-type source regions is introduced intothe surface area of the semiconductor region by, e.g., ion implantation.Thereafter, the resist film 15 for introducing N⁺-type source regionswhich is no longer needed is removed by, e.g., ashing or the like, andthen activation anneal is performed.

Next, as shown in FIG. 33, over substantially the entire surface of thewafer 1 on the device surface 1 a side, the interlayer insulating film 8formed of a silicon-oxide-based insulating film or the like is depositedby, e.g., CVD.

Next, as shown in FIG. 34, over the interlayer insulating film 8, theresist film 29 for contact trench processing is formed by, e.g., typicallithography (note that a hard mask of a silicon oxide film, a siliconnitride film, or the like may also be used). Then, using the resist filmfor contact trench processing as a mask, the contact trenches 11 areopened by, e.g., anisotropic dry etching and extended as necessary inthe semiconductor substrate.

Next, as shown in FIG. 35, into the surface area of the semiconductorsubstrate at the bottom of each of the contact trenches 11, the P⁺-typebody contact regions 19 are introduced by, e.g., ion implantation.Thereafter, the resist film 29 for contact trench processing is removedby, e.g., ashing or the like, and then activation anneal is performed.

Next, as shown in FIG. 36, over the interlayer insulating film 8 andsubstantially the entire inner surface of each of the contact trenches11, a titanium film and a titanium nitride film which are relativelythin (thinner than a tungsten film described later) are successivelydeposited as a barrier metal film or the like by, e.g., sputteringdeposition. Then, over the barrier metal film over substantially theentire device surface 1 a of the wafer 1, the tungsten film is depositedby, e.g., CVD so as to fill the contact trenches 11. Then, by removingthe barrier metal film and the tungsten film outside the contact holes11 by an etch-back process or CMP (Chemical Mechanical Polishing), thecontact trenches 11 are filled with the tungsten plugs 9. Then, oversubstantially the entire surface of the wafer 1 on the device surface 1a side, a barrier metal film (such as a titanium film, a titaniumfilm/nitride film, a TiW film or the like) which is relatively thin(thinner than an aluminum-based metal film described later) is depositedby, e.g., sputtering deposition. Then, over substantially the entiresurface of the barrier metal film, the aluminum-based metal film isdeposited by, e.g., sputtering deposition. Then, by, e.g., typicallithography, a metal electrode film including the barrier metal film,the aluminum-based metal film, and the like is processed to form thesource metal electrode 21 and the like. Then, over substantially theentire surface of the wafer 1 on the device surface 1 a side, aphotosensitive polyimide-based insulating film is deposited as the finalpassivation film 10 by, e.g., coating. Then, by processing thephotosensitive polyimide-based insulating film by typical lithography,the final passivation film 10 is formed into a pattern (alternatively,the patterning may also be performed using a non-photosensitivepolyimide-based insulating film). Note that, here, the opening of thefinal passivation film 10 corresponding to a source pad opening is shownschematically, but a real source pad opening is wider. Preferredexamples of the final passivation film 10 include not only an organicsingle-layer film of a polyimide resin (polyimide-based resin), BCB(Benzocyclobutene), or the like, but also an organic/inorganic compositefinal passivation film including a plasma TEOS(Tetraethylorthosilicate)-based silicon oxide film or another siliconoxide film, a silicon nitride film, a polyimide-based resin film, andthe like which are shown in ascending order, an inorganic finalpassivation film including a silicon oxide film, a silicon nitride film,and the like which are shown in ascending order, and the like. Then, theback surface 1 b of the wafer 1 is subjected to back grinding treatmentto reduce the thickness of the wafer (having an original thickness ofabout 500 to 1000 μm) to about 100 to 300 μm. Then, the back-surfacemetal electrode 5 is formed by sputtering deposition or the like.Examples of the configuration of the back-surface metal electrode 5which can be shown include that of a film including a titanium film, anickel film, a gold film, and the like which are shown in order ofincreasing distance from the silicon substrate 1 s. Thereafter, bydicing, the wafer 1 is divided into individual chips to provide thediscrete devices 2 (semiconductor chips).

5. Description of Modification 1 (P-type Body Carbon Doping) Related toStructure of Channel Regions in Vertical Planar Power MOSFET, etc. asExample of Target Device in Manufacturing Method of Semiconductor Deviceof Embodiment of Present Invention (See Mainly FIG. 37)

In this section, a description will be given to a modification intendedfor the device structure described in Section 1. To the manufacturingmethod of the device, any one of Sections 2 to 4 is basicallyapplicable.

The characteristic feature of each of the device structures of Sections5 to 8 is that each of the P-type body regions 6 (channel regions) orthe N⁺-type source regions 15 has, e.g., a part thereof doped withcarbon.

FIG. 37 is a device cross-sectional view of the unit active cell regioncorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2 corresponding to FIG. 3, which is forillustrating Modification 1 (P-type body carbon doping) related to thestructure of channel regions in a vertical planar power MOSFET or thelike as the example of the target device in the manufacturing method ofthe semiconductor device of the embodiment of the present invention.Based on this drawing, a description will be given to Modification 1(P-type body carbon doping) related to the structure of channel regionsin a vertical planar power MOSFET or the like as the example of thetarget device in the manufacturing method of the semiconductor device ofthe embodiment of the present invention.

The example is characterized in that, as shown in FIG. 37, in comparisonto the structure of FIG. 3, a P-type body inner carbon-doped region 6 cis provided in each of the P-type body regions 6. When there are suchP-type body inner carbon-doped regions 6 c, the effect of inhibitingboron from being diffused to the outside due to heat treatment isachieved. Therefore, it is possible to retain a sharp impurity profilein each of the P-type body regions 6. As a result, it is also possibleto suppress an increase in ON resistance. A preferred range of theamount of carbon doping is, e.g., about 0.01 to 1 at % (more preferably,about 0.05 to 0.5 at %).

Note that, in terms of the manufacturing method, a period during whichcarbon is added may be provided appropriately midway (relatively early)in the selective growth shown in FIG. 9.

6. Description of Modification 2 (Source Carbon Doping) Related toStructure of Source Regions in Vertical Planar Power MOSFET, etc. asExample of Target Device in Manufacturing Method of Semiconductor Deviceof Embodiment of Present Invention (See Mainly FIG. 38)

In this section, a description will be given to another modificationintended for the device structure described in Section 1. To themanufacturing method of the device, any one of Sections 2 to 4 isbasically applicable.

FIG. 38 is a device cross-sectional view of the unit active cell regioncorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2 corresponding to FIG. 3, which is forillustrating Modification 2 (source carbon doping) related to thestructure of source regions in the vertical planar power MOSFET or thelike as the example of the target device in the manufacturing method ofthe semiconductor device of the embodiment of the present invention.Based on this drawing, a description will be given to Modification 2(source carbon doping) related to the structure of source regions in thevertical planar power MOSFET or the like as the example of the targetdevice in the manufacturing method of the semiconductor device of theembodiment of the present invention.

The example is characterized in that, as shown in FIG. 38, in comparisonto the structure of FIG. 3, an N⁺-type source inner carbon-doped region15 c is provided in each of the N⁺-type source regions 15. When thereare such N⁺-type source inner carbon-doped regions 15 c, the latticeconstant decreases in the portions therewith so that an extensionalstress acts on the channel portions to increase the mobility ofelectrons. As a result, the ON resistance decreases. A preferred rangeof the amount of carbon doping is, e.g., about 0.1 to 1 at % (morepreferably, about 0.3 to 0.5 at %).

Note that, in terms of the manufacturing method, a period during whichcarbon is added may be provided appropriately midway (relatively early)in the selective growth shown in FIG. 9.

7. Description of Modification 1 (P-Type Body & Source Carbon Doping)Related to Structures of Channel and Source Regions in Vertical PlanarPower MOSFET, etc. as Example of Target Device in Manufacturing Methodof Semiconductor Device of Embodiment of Present Invention (See MainlyFIG. 39)

In this section, a description will be given to a modification intendedfor the device structure described in Section 1 which is an examplerelated to a combination of the individual modifications of Sections 5and 6. To the manufacturing method of the device, any one of Sections 2to 4 is basically applicable.

FIG. 39 is a device cross-sectional view of the unit active cell regioncorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2 corresponding to FIG. 3, which is forillustrating Modification 1 (P-type body & source carbon doping) relatedto the structure of the channel and source regions in the verticalplanar power MOSFET or the like as the example of the target device inthe method of manufacturing the semiconductor device of the embodimentof the present invention. Based on this drawing, a description will begiven to Modification 1 (P-type body & source carbon doping) related tothe structures of channel and source regions in the vertical planarpower MOSFET or the like as the example of the target device in themanufacturing method of the semiconductor device of the embodiment ofthe present invention.

The example is characterized in that, as shown in FIG. 39, in comparisonto the structure of FIG. 3, the N⁺-type source inner carbon-dopedregions 15 c are provided in the respective N⁺-type source regions 15and also the P-type body inner carbon-doped regions 6 c are provided inthe respective P-type body regions 6.

Note that, in terms of the manufacturing method, a period during whichcarbon is added may be provided appropriately midway (relatively earlyduring a first half period and during a second half period) in theselective growth shown in FIG. 9.

8. Description of Modification (Carbon Cluster Implantation) of DoseProcess Corresponding to Modification 2 (Source Carbon Doping) Relatedto Structure of Source Regions in Vertical Planar Power MOSFET, etc. asExample of Target Device in Manufacturing Method of Semiconductor Deviceof Embodiment of Present Invention (See Mainly FIG. 40)

In this section, a description will be given to a modification relatedto the manufacturing method of the device described in Section 6. To themanufacturing method of the device, any one of Sections 2 to 4 isbasically applicable in the same manner as in Section 6.

FIG. 40 is a device cross-sectional view of the unit active cell regioncorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 2 corresponding to FIG. 3, which is forillustrating a modification (carbon cluster implantation) of a doseprocess corresponding to Modification 2 (source carbon doping) relatedto the structure of source regions in the vertical planar power MOSFETor the like as the example of the target device in the method ofmanufacturing the semiconductor device of the embodiment of the presentinvention. Based on this drawing, a description will be given to themodification (carbon cluster implantation) of the dose processcorresponding to Modification 2 (source carbon doping) related to thestructure of the source regions in the vertical planar power MOSFET orthe like as the example of the target device in the manufacturing methodof the semiconductor device of the embodiment of the present invention.

The example is characterized in that, as shown in FIG. 40, in comparisonto the structure of FIG. 38, the N⁺-type source inner carbon-dopedregions 15 c are replaced with carbon-cluster-ion-implantation N⁺-typesource inner carbon-doped regions 15 cc formed by ion implantation ofcarbon cluster ions.

Note that, in terms of the manufacturing method, in the state shown in,e.g., FIG. 11 or 12, carbon cluster ions are implanted from the devicesurface 1 a of the wafer 1.

9. Description of Trench-Gate Power MOSFET, etc. as Example of TargetDevice in Manufacturing Method of Semiconductor Device of AnotherEmbodiment of Present Invention (See Mainly FIGS. 41 and 42)

The example described in this section is a modification of a peripheralstructure around a gate electrode, which is intended for each of thedevice structures described in Sections 1, 5, 6, and 7. Accordingly, thedescription given herein corresponds to FIGS. 1 to 3, and is exactly thesame with regard to FIG. 1. Therefore, the description thereof isomitted, and a description will be given to FIGS. 2 and 3 as differentportions.

FIG. 41 is an enlarged plan view of the partially cut-away region R1 ofthe cell portion of FIG. 1 corresponding to FIG. 2, which is forillustrating a trench-gate power MOSFET as an example of the targetdevice in a method of manufacturing a semiconductor device of anotherembodiment of the present invention. FIG. 42 is a device cross-sectionalview (corresponding to FIG. 3) of the unit active cell regioncorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 41. Based on these drawings, adescription will be given to the trench-gate power MOSFET or the like asan example of a target device in a manufacturing method of asemiconductor device of another example of the present invention.

Next, using FIGS. 41 and 42, a detailed structure of the cell region 26(FIG. 1) is described. As shown in FIGS. 41 and 42, over an N⁺-type Sisingle-crystal substrate region 1 s, a drift region 3 having a superjunction structure SJ is provided. In the drift region 3, the N-typecolumn regions NC and the P-type column regions PC each having aplate-like shape and extending in a direction perpendicular to papersurfaces with FIGS. 41 and 42 are alternately formed. In this portion,the N-type column regions NC function as the N⁻-type drift regions 3 n.Note that, by adding carbon or germanium to the P-type column regions PCand providing the P-type column regions PCC doped with carbon orgermanium, it is possible to reduce the scattering of an impurityprofile due to heat treatment, though the addition of carbon orgermanium is not mandatory.

Here, if the breakdown voltage of the drift region is assumed to beabout 600 V, as a preferred thickness thereof, e.g., about 45 μm can beshown by way of example. As a preferred width of each of the N-typecolumn regions, e.g., about 6 μm can be shown by way of example.Likewise, as a preferred width of each of the P-type column regions,e.g., about 4 μm can be shown by way of example. Note that the innerangle of the lower portion of each of the side surfaces of the N-typecolumn region is typically 88 to 90 degrees.

In the upper end portion (closer to the substrate upper surface 1 a) ofthe drift region 3, the P-type body regions 6 forming channel regionsare provided. In the P-type body regions 6, N⁺-type source regions 15are provided. SiGe-based P⁺-type body contact regions 19 g are providedso as to come in contact with the N⁺-type source regions 15 when viewedfrom over the upper surface. On the device surface 1 a side of thesemiconductor substrate 2, the polysilicon gate electrodes 12 (trenchgate portions 12 t are in trenches 34 to be filled with gates) areprovided via the gate insulating film 7. Substantially the upper halfportions of the polysilicon gate electrodes 12 are covered with thesurface oxide film 24 as the interlayer insulating film. The portions ofthe device surface 1 a of the semiconductor substrate in which thepolysilicon gate electrodes 12 are not provided serve as the contacttrenches 11. In the contact trenches 11, the aluminum-based metal sourceelectrode 21 is formed so as to be coupled to the N⁺-type source regions14 and to the SiGe-based P⁺-type body contact region 19 g via a barriermetal layer of, e.g., Ti/TiN, TiW, or the like. Note that, as shown in,e.g., FIG. 3, the metal source electrode 21 may also be formed via thetungsten plugs 9.

Over the aluminum-based metal source electrode 21, as a finalpassivation film 10, e.g., a polyimide-based insulating film 10 isformed. Note that, here, the opening of the final passivation film 10corresponding to a source pad opening is shown schematically, but a realsource pad opening is wider. Preferred examples of the final passivationfilm 10 include not only an organic single-layer film of a polyimideresin (polyimide-based resin), BCB (Benzocyclobutene), or the like, butalso an organic/inorganic composite final passivation film including aplasma TEOS (Tetraethylorthosilicate)-based silicon oxide film oranother silicon oxide film, a silicon nitride film, a polyimide-basedresin film, and the like which are shown in ascending order, aninorganic final passivation film including a silicon oxide film, asilicon nitride film, and the like which are shown in ascending order,and the like.

On the other hand, the lower end portion of the drift region 3 serves asan N⁺-type drain region 4 (i.e., the N⁺-type semiconductor substrate 1s) and, on the back surface 1 b side of the N⁺-type drain region 4, ametal drain electrode 5 (including, e.g., Ti/Ni/Au layers shown in orderof increasing distance from the silicon substrate).

As will be described later, here, the SiGe-based P⁺-type body contactregions 19 g are formed by selective epitaxial growth. As a result,compared to the case where the SiGe-based P⁺-type body contact regions19 g are formed by a typical method including ion implantation,activation heat treatment, and the like, the scattering of an impurityprofile in each of the P-type column regions PC or the like included inthe super junction structure SJ can be prevented more reliably. Inaddition, since SiGe has a lattice constant larger than that of silicon,each of the channel regions receives a compressive stress perpendicularto a channel direction so that the mobility of electrons is improved.

10. Description of Wafer Process in Manufacturing Method ofSemiconductor Device of Another Embodiment of Present Invention (SeeMainly FIGS. 43 to 54)

In this section, a description will be given to an example of themanufacturing method based on the trench-fill method intended for thedevice structure described in Section 9. However, it will be appreciatedthat the manufacturing method based on the trench-fill method intendedfor the device structure described in Section 1 is not limited to thesetwo examples, and can be variously modified. It will also be appreciatedthat the manufacturing method is not limited to a trench-fill method,and can also be based on a multi-epitaxial method.

Since the following process is basically the same in regard to FIGS. 4to 7 described in Section 1, a description will be given below only todifferent portions in principle.

FIG. 43 is a device cross-sectional view (of the step of forming a superjunction structure in a drift region) during the manufacturing stepcorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 41, which is for illustrating a waferprocess in the method of manufacturing the semiconductor device of theother embodiment of the present invention. FIG. 44 is a devicecross-sectional view (of the step of epitaxial growth of P-type bodyregions) during the manufacturing step corresponding to the B-B′ crosssection of the partially cut-away region R2 of the cell portion of FIG.41, which is for illustrating the wafer process in the method ofmanufacturing the semiconductor device of the other embodiment of thepresent invention. FIG. 45 is a device cross-sectional view (of the stepof forming trenches to be filled with gate electrodes) during themanufacturing step corresponding to the B-B′ cross section of thepartially cut-away region R2 of the cell portion of FIG. 41, which isfor illustrating the wafer process in the method of manufacturing thesemiconductor device of the other embodiment of the present invention.FIG. 46 is a device cross-sectional view (of the step of forming a gateinsulating film) during the manufacturing step corresponding to the B-B′cross section of the partially cut-away region R2 of the cell portion ofFIG. 41, which is for illustrating the wafer process in the method ofmanufacturing the semiconductor device of the other embodiment of thepresent invention. FIG. 47 is a device cross-sectional view (of the stepof depositing a gate polysilicon film) during the manufacturing stepcorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 41, which is for illustrating the waferprocess in the method of manufacturing the semiconductor device of theother embodiment of the present invention. FIG. 48 is a devicecross-sectional view (of the step of processing the gate polysiliconfilm) during the manufacturing step corresponding to the B-B′ crosssection of the partially cut-away region R2 of the cell portion of FIG.41, which is for illustrating the wafer process in the method ofmanufacturing the semiconductor device of the other embodiment of thepresent invention. FIG. 49 is a device cross-sectional view (of the stepof introducing N⁺-type source regions) during the manufacturing stepcorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 41, which is for illustrating the waferprocess in the method of manufacturing the semiconductor device of theother embodiment of the present invention. FIG. 50 is a devicecross-sectional view (of the step of depositing a surface oxide film)during the manufacturing step corresponding to the B-B′ cross section ofthe partially cut-away region R2 of the cell portion of FIG. 41, whichis for illustrating the wafer process in the method of manufacturing thesemiconductor device of the other embodiment of the present invention.FIG. 51 is a device cross-sectional view (of the step of etching asurface of a semiconductor substrate) during the manufacturing stepcorresponding to the B-B′ cross section of the partially cut-away regionR2 of the cell portion of FIG. 41, which is for illustrating the waferprocess in the method of manufacturing the semiconductor device of theother embodiment of the present invention. FIG. 52 is a devicecross-sectional view (of the step of forming SiGe body contact regions)during the manufacturing step corresponding to the B-B′ cross section ofthe partially cut-away region R2 of the cell portion of FIG. 41, whichis for illustrating the wafer process in the method of manufacturing thesemiconductor device of the other embodiment of the present invention.FIG. 53 is a device cross-sectional view (of the step of forming asource metal electrode) during the manufacturing step corresponding tothe B-B′ cross section of the partially cut-away region R2 of the cellportion of FIG. 41, which is for illustrating the wafer process in themethod of manufacturing the semiconductor device of the other embodimentof the present invention. FIG. 54 is a device cross-sectional view (ofthe step of forming the metal drain electrode) during the manufacturingstep corresponding to the B-B′ cross section of the partially cut-awayregion R2 of the cell portion of FIG. 41, which is for illustrating thewafer process in the method of manufacturing the semiconductor device ofthe other embodiment of the present invention. Based on these drawings,a description will be given to a wafer process in the manufacturingmethod of the semiconductor device of the other embodiment of thepresent invention.

FIG. 43 shows substantially the same state as shown in FIG. 7 (FIG. 27).Accordingly, in the state shown in FIG. 43, as shown in FIG. 44, achannel-region epitaxially grown layer 33 is formed by non-selectiveepitaxial growth on the device surface 1 a (first main surface) side ofthe wafer 1. The layer serves as each of the P-type body regions 6(channel regions).

Next, as shown in FIG. 45, on the device surface 1 a side of the wafer1, a resist film 30 for gate trench formation is formed by, e.g.,typical lithography. Then, using the resist film 30 for gate trenchformation, the trenches 34 to be filled with gates are formed by, e.g.,anisotropic dry etching. Thereafter, the resist film 30 for gate trenchformation which is no longer needed is removed by, e.g., asking or thelike.

Next, as shown in FIG. 46, by, e.g., thermal oxidation or the like, agate insulating film 7 is formed over the device surface 1 a of thewafer 1 and the inner surfaces of the trenches 34 to be filled withgates by, e.g., thermal oxidation or the like.

Next, as shown in FIG. 47, over substantially the entire device surface1 a of the wafer 1, the polysilicon film 12 intended to serve as gateelectrodes is deposited by, e.g., CVD so as to fill the trenches 34 tobe filled with gates.

Next, as shown in FIG. 48, on the device surface 1 a side of the wafer1, the resist film 32 for gate electrode processing is formed by, e.g.,typical lithography. Then, using the resist film 32 for gate electrodeprocessing, the polysilicon film 12 and the gate insulating film 7 areprocessed by, e.g., anisotropic dry etching to form the gate electrodes12.

Next, as shown in FIG. 49, in the state shown in FIG. 48, e.g., arsenicions are implanted from the device surface 1 a side of the wafer 1 tointroduce the N⁺-type source regions 15 into the surface areas of theP-type body regions 6 (channel regions). Thereafter, the resist film 32for gate electrode processing which is no longer needed is removed by,e.g., asking or the like.

Next, as shown in FIG. 50, over the device surface 1 a of the wafer 1and the side surfaces and upper surface of each of the gate electrodes12, the surface oxide film 24 serving as the interlayer insulating filmor the like is deposited by, e.g., thermal oxidation or the like.

Next, as shown in FIG. 51, over the device surface 1 a of the wafer 1,the resist film 29 for contact trench processing is formed by, e.g.,typical lithography. Then, using the resist film 29 for contact trenchprocessing, by, e.g., anisotropic dry etching, the surface oxide film 24is partly removed and the silicon substrate is removed by etching pastthe N⁺-type source region 15 till a midpoint in each of the P-type bodyregions 6 is reached. In this manner, the contact trenches 11 (i.e.,trenches to be filled with SiGe epitaxial regions) are formed.Thereafter, the resist film 29 for contact trench processing which is nolonger needed is removed by, e.g., ashing or the like.

Next, as shown in FIG. 52, by, e.g., selective SiGe epitaxial growth,the contact trenches 11 are filled back to, e.g., the heights of theupper ends of the N⁺-type source regions 15. As a result, the SiGe-basedP⁺-type body contact regions 19 g (i.e., boron-doped SiGe epitaxialregions) are formed. As preferred examples of conditions for theselective epitaxial growth, the following can be shown. That is, aprocessing temperature is, e.g., about 600 to 700° C. (i.e., not morethan 800° C.), a processing barometric pressure is, e.g., about 660 Pato 2.7 kPa, a deposition time is, e.g., about 5 to 30 minutes, and gasconditions, flow rates, and the like of, e.g., DCS (Dichlorosilane),GeH₄, HCl, and B₂H₆ are about 50 to 100 sccm, 130 to 200 sccm, 20 to 40sccm, and 10 to 20 sccm. Note that, as a precursor for the foregoingSiGe epitaxial growth, not only the DCS, but also TCS is alsoapplicable. If consideration is given to these precursors, a preferredrange of the growth temperature can be set to about 550 to 800° C. Apreferred range of the processing barometric pressure can be set toabout 660 Pa to an atmospheric pressure.

Next, as shown in FIG. 53, by, e.g., anisotropic dry etching, thesurfaces of the SiGe-based P⁺-type body contact regions 19 g are etchedback to, e.g., around the lower ends of the N⁺-type source regions 15.However, this step is naturally not indispensable. Then, oversubstantially the entire device surface 1 a of the wafer 1, by, e.g.,sputtering deposition, a relatively thin (thinner than an aluminum-basedmetal film described later) barrier metal film (such as, e.g., atitanium film, a titanium film/titanium nitride film, or a TiW film) isdeposited. Then, over substantially the entire surface of the barriermetal film, an aluminum-based metal film is deposited by, e.g.,sputtering deposition. Then, by, e.g., typical lithography, a metalelectrode film including the barrier metal film, the aluminum-basedmetal film, and the like is processed to form the source metal electrode21 and the like. Then, over substantially the entire surface of thewafer 1 on the device surface 1 a side, a photosensitive polyimide-basedinsulating film is deposited as the final passivation film 10 by, e.g.,coating. Then, by processing the photosensitive polyimide-basedinsulating film by typical lithography, the final passivation film 10 isformed into a pattern (alternatively, the patterning may also beperformed using a non-photosensitive polyimide-based insulating film).Note that, here, the opening of the final passivation film 10corresponding to a source pad opening is shown schematically, but a realsource pad opening is wider. Preferred examples of the final passivationfilm 10 include not only an organic single-layer film of a polyimideresin (polyimide-based resin), BCB (Benzocyclobutene), or the like, butalso an organic/inorganic composite final passivation film including aplasma TEOS (Tetraethylorthosilicate)-based silicon oxide film oranother silicon oxide film, a silicon nitride film, a polyimide-basedresin film, and the like which are shown in ascending order, aninorganic final passivation film including a silicon oxide film, asilicon nitride film, and the like which are shown in ascending order,and the like. Then, the back surface 1 b of the wafer 1 is subjected toback grinding treatment to reduce the thickness of the wafer (having anoriginal thickness of about 500 to 1000 μm) to about 100 to 300 μm.

Next, as shown in FIG. 54, the back-surface metal electrodes 5 areformed by sputtering deposition or the like. Examples of a configurationof the back-surface metal electrode 5 which can be shown include a filmincluding a titanium film, a nickel film, a gold film, and the likewhich are shown in order of increasing distance from the siliconsubstrate is. Thereafter, by dicing, the wafer 1 is divided intoindividual chips to provide the discrete devices 2 (semiconductorchips).

11. Description of Modification (Ion Implantation Method) Related toMethod of Forming SiGe Regions in Manufacturing Method of SemiconductorDevice of Another Embodiment of Present Invention (See Mainly FIG. 55)

In this section, a description will be given to a modification relatedto a method of forming the SiGe regions (body contact regions) in themanufacturing process described in Section 10. Since this example is amodification related to FIGS. 51 and 52 and otherwise unchanged, adescription will be given only to different portions in FIGS. 51 and 52in principle.

FIG. 55 is a device cross-sectional view (of the step of depositing asurface oxide film and introducing SiGe regions) during themanufacturing step corresponding to the B-B′ cross section of thepartially cut-away region R2 of the cell portion of FIG. 41corresponding to FIG. 50, which is for illustrating a modification (ionimplantation method) related to a method of forming the SiGe regions inthe method of manufacturing the semiconductor device of the otherembodiment of the present invention. Based on this drawing, adescription will be given to a modification (ion implantation method)related to the method of forming the SiGe regions in the manufacturingmethod of the semiconductor device of the other embodiment of thepresent invention.

In the state shown in FIG. 50, as shown in FIG. 55, a resist film 35 forGe & B ion implantation is formed by, e.g., typical lithography. Usingthe resist film 35 for Ge & B ion implantation as an ion implantationmask, e.g., boron ions and germanium ions GB are sequentially introducedinto the N⁺-type source regions 15 and the P-type body regions 6(channel regions) by, e.g., ion implantation. Then, using the resistfilm 35 for Ge & B ion implantation as a mask, the surface oxide film 24over the N⁺-type source regions 15 is removed by, e.g., anisotropic dryetching. Thereafter, the resist film 35 for Ge & B ion implantationwhich is no longer needed is removed by, e.g., ashing or the like. Then,anneal for activating the boron ions and germanium ions or the like isperformed. As a result, the SiGe-type P⁺-type body contact regions 19 g(i.e., boron-doped SiGe semiconductor regions) are substantiallycompleted to result in the state shown in FIG. 52. The subsequent stepsare substantially the same as shown in FIGS. 53 and 54.

Supplementary Explanation Related to Crystal Plane Orientation of Wafer,etc. Related to Each of Above Embodiments (Including VariousModifications) (See Mainly FIGS. 56 and 57)

In each of the examples described heretofore, the description has beengiven based on the following first crystal orientation (notch directionof <100> orientation) unless particularly described otherwise. However,it will be appreciated the following second crystal orientation (notchdirection of <100> orientation) or another orientation may also be usedfor a reason other than what is required for the formation of the superjunction structure.

FIG. 56 is an overall top view or the like of a wafer or the like forsupplementary explanation related to an example (notch direction of<110> orientation) of the crystal plane orientation of the wafer or thelike related to each of the foregoing embodiments (including the variousmodifications). FIG. 57 is an overall top view or the like of the waferor the like for supplementary explanation related to another example(notch direction of <100> orientation) of the crystal plane orientationof the wafer or the like related to each of the foregoing embodiments(including the various modifications). Based on these drawings, asupplementary explanation will be given to the crystal plane orientationof the wafer or the like related to each of the foregoing embodiments(including the various modifications) and the like.

(1) Example (First Crystal Orientation) of Wafer Having Notch Directionof <110> Orientation

FIG. 56 shows the entire upper surface of the wafer 1 having the firstcrystal orientation (notch direction of <110> orientation) and the uppersurface of each of the chip regions thereof. As shown in FIG. 56, thedevice surface 1 a of the wafer 1 is in a (100) plane, and the directionof a notch 14 is a <110> orientation. The characteristic feature of thewafer 1 is that, in a plane parallel with the device surface 1 a, adirection resulting from a 45-degree rotation from the direction of thenotch 14 around the center of the wafer is a <100> orientation. Here,the orientation of each of the trenches 16 to be filled with P-typecolumns in the super junction structure SJ in each of the chip regions 2is parallel with any of the sides of the chip. Such an orientation ofeach of the trenches 16 to be filled with P-type columns has theadvantage of improved filling properties when the trenches 16 are filledwith the P-type column regions PC (e.g., FIG. 6) by a trench-fillmethod. In addition, the longitudinal direction (longitudinal directionof the trench of the trench gate MOSFET) of the gate electrode of eachof the planar MOSFETs in each of the chip regions 2 is also parallelwith any of the sides of the chip.

(2) Example (Second Crystal Orientation) of Wafer Having Notch Directionof <110> Orientation

In another preferred crystal orientation other than the first crystalorientation, as shown in FIG. 57, the device surface 1 a of the wafer 1is in the (100) plane, and the direction of the notch 14 is the <100>orientation. The characteristic feature of the wafer 1 is that, in aplane parallel with the device surface 1 a, a direction resulting from a45-degree rotation from the direction of the notch 14 around the centerof the wafer is the <110> direction. Here, in the same manner asdescribed above, the orientation of each of the trenches 16 to be filledwith P-type columns in the super junction structure SJ in each of thechip regions 2 is parallel with any of the sides of the chip. Such anorientation of each of the trenches 16 to be filled with P-type columnshas the advantage of improved filling properties when the trenches 16are filled with the P-type column regions PC (e.g., FIG. 6) by atrench-fill method. In addition, the longitudinal direction(longitudinal direction of the trench of the trench gate MOSFET) of thegate electrode of each of the planar MOSFETs in each of the chip regions2 is also parallel with any of the sides of the chip. The wafer havingthe second crystal orientation is particularly effective for a methodwhich does not include the process of filling each of trenches in asuper junction structure with an epitaxial layer, such as, e.g., amulti-epitaxial method.

13. Consideration to Every Aspect of Present Invention and SupplementaryExplanation Related to Each of Embodiments

As has been described heretofore, in each of the examples in Sections 1to 8, the formation of the body regions 6 (channel regions) is performednot by combining ion implantation with high-temperature activationanneal (at, e.g., 950 to 1100° C.), but by selective epitaxial growth ata relatively low temperature to prevent the scattering of an impurityprofile in each of the P-type column regions PC included in the superjunction structure SJ. Here, in the case of Si epitaxial growth, therelatively low temperature indicates a range of about 750 to 900° C., ormore preferably about 750 to 850° C.

Also, in each of the examples in Sections 9 and 10, not the body regions6 (channel regions), but the P⁺-type body contact regions 19 areimplemented by selective epitaxial growth at a relatively lowtemperature to prevent the scattering of an impurity profile in each ofthe P-type column regions PC included in the super junction structureSJ. Here, in the case of SiGe epitaxial growth, the relatively lowtemperature indicates a range of 600 to 700° C., i.e., not more than800° C.

The examples in Sections 9 and 10 achieve an improvement in the mobilityof electrons by means of a stress perpendicular to the channel of eachof the trench-gate power MOSFETs produced using the P⁺-type body contactregions 19 embedded by selective epitaxial growth.

In regard to this, the example in Section 12 implements the structure inSection 9 by ion implantation and activation heat treatment.

14. Summary

While the invention achieved by the present inventors has beenspecifically described heretofore based on the embodiments thereof, thepresent invention is not limited to the foregoing embodiments. It willbe appreciated that various changes and modifications can be made in theinvention within the scope not departing from the gist thereof.

For example, in each of the foregoing embodiments, the MOS structure ofthe planar gate structure has been described specifically by way ofexample. However, it will be appreciated that the present invention isnot limited thereto, and can be similarly applied to the trench-gatestructure of a U-MOSFET or the like or to an LD-MOSFET. Also, as thelayout of the MOSFETs, the example has been shown in which the MOSFETsare arranged in a striped configuration in parallel with the pn columns.However, various applications are enabled by arranging the MOSFETs in adirection orthogonal to the pn columns or arranging the MOSFETs in agrid-like configuration.

Note that, in each of the foregoing embodiments, the configuration inwhich the N-channel devices are formed primarily over the upper surfaceof the N-type epitaxial layer over the N⁺-type single-crystal siliconsubstrate has been described specifically, but the present invention isnot limited thereto. It may also be possible to use a configuration inwhich P-channel devices are formed over the upper surface of an N-typeepitaxial layer over a P⁺-type single-crystal silicon substrate.

Also, in each of the foregoing embodiments, the N-channel power (or NPN)semiconductor has been mainly described, but a P-channel power (or PNP)semiconductor is obtained by structurally replacing the P and N types ofall the regions with the opposite conductivity types (PN inversion).Note that, in terms of the manufacturing method, selective implantationof P-type or N-type ions, P-type or N-type (full-face or embedded)epitaxial growth, or the like may be used appropriately.

Also, in the foregoing embodiment, the power MOSFETs have been describedspecifically by way of example, but the present invention is not limitedthereto. It will be appreciated that the present invention is alsoapplicable to power devices each having a super junction structure(including an IGBT and a thyristor), i.e., a diode, a bipolartransistor, and the like. It will be appreciated that the presentinvention is also applicable to a semiconductor integrated circuitdevice or the like in which such a power MOSFET, a diode, a bipolartransistor, or the like are embedded.

Also, in each of the foregoing embodiments, the trench-fill method hasbeen primarily described specifically as the method of forming the superjunction structure, but the present invention is not limited thereto.For example, it will be appreciated that the present invention is alsoapplicable to a multi-epitaxial method or the like.

Note that, in the foregoing embodiment, the example usingmonomethylsilane or the like for carbon doping has been describedspecifically. However, it will be appreciated the present invention isnot limited thereto, and can also use a liquefied gas of, e.g.,trimethylsilane or the like.

What is claimed is:
 1. A semiconductor device including a super junctionstructure, comprising: a semiconductor substrate; a drain region of afirst conductivity type formed in the semiconductor substrate; a driftregion of the first conductivity type formed over the drain region; acolumn region of a second conductivity type opposite to the firstconductivity type formed in the drift region; a body region of thesecond conductivity type formed in the drift region and arranged overthe column region; a source region of the first conductivity type formedin the body region; a gate insulating film formed over the drift regionand the body region; a gate electrode formed over the gate insulatingfilm; and a metal source electrode formed over the body region andelectrically connected to the body region and the source region, whereina first trench is formed in the column region and the drift region, andwherein the body region is formed of an epitaxial layer and is embeddedin the first trench.
 2. A semiconductor device according to the claim 1,wherein an impurity concentration of the body region is higher than animpurity concentration of the column region.
 3. A semiconductor deviceaccording to the claim 2, wherein an impurity region of the secondconductivity type is formed in the body region and is arranged at abottom of the metal source electrode, and wherein an impurityconcentration of the impurity region is higher than an impurityconcentration of the body region.
 4. A semiconductor device according tothe claim 1, wherein a second trench is formed in the drift region, andwherein the column region is formed of an epitaxial layer and isembedded in the second trench.
 5. A semiconductor device according tothe claim 1, wherein the column region is formed of multi-level ionimplantation region.
 6. A semiconductor device according to the claim 1,wherein the body region has an area doped with carbon.
 7. Asemiconductor device according to the claim 6, wherein the source regionhas an area doped with carbon.
 8. A semiconductor device according tothe claim 1, wherein the first conductivity type is n-type, and whereinthe second conductivity type is p-type.